Glass mold semiconductor device

Claim 2

A glass mold semiconductor device comprising; a rectifier unit including a plurality of semiconductor pellets each having a PN junction, said plurality of semiconductors being bonded with each other into a laminated structure; a couple of electrodes bonded to the ends of said rectifier unit; and a mold glass including a glass material and a filling material for approximating the coefficient of thermal expansion of said glass material to that of said rectifier unit, said glass material containing glass of zinc borosilicate as its main component, said mold glass covering said rectifier unit and at least the rectifier unit side of said electrodes.

Claim 3

A glass mold semiconductor device according to claim 1, in which said filling material consists essentially of granulated lead titanate 5 to 30 percent by weight of said glass material.

Claim 4

A glass mold semiconductor device according to claim 2, in which the grain size distribution of said lead titanate is such that grains of 5 microns or less in diameter represent 40 percent or less of the whole lead titanate, while grains of 50 microns or more in diameter make up 5 percent or less thereof.

Claim 5

A glass mold semiconductor device according to claim 2, in which the ratio of lead oxide to titanium oxide contained in lead titanate ranges from 1.1 to 5.

Claim 6

A glass mold semiconductor device according to claim 1, in which said filling material consists essentially of granulated quartz glass 5 to 20 percent by weight of said glass material.

Claim 7

A glass mold semiconductor device according to claim 5, in which each grain of said quartz glass has the diameter of between 5 and 50 microns.

Claim 8

A glass mold semiconductor device comprising; a rectifier unit including a plurality of silicon or germanium pellets each with a predetermined PN junction and a plurality of soldering layers interposed between said pellets thereby to form a laminated structure; a couple of main electrodes consisting of conductors bonded to the ends of said rectifier unit, the coefficient of thermal expansion of said conductors approximating that of said pellets; and a mold glass including a glass material and a filling material for approximating the coefficient of thermal expansion of said glass material to that of said rectifier unit, said mold glass covering said rectifier unit and at least the rectifier unit side of said main electrodes, said glass material containing as its main component a glass of zinc borosilicate group consisting of, by weight, 60 to 70 percent of zinc oxide, 19 to 25 percent of boron oxide and 10 to 16 percent of silicon oxide.

Claim 9

A glass mold semiconductor device comprising; a rectifier unit including a plurality of silicon or germanium pellets each with a predetermined PN junction and a plurality of soldering layers interposed between said pellets thereby to form a laminated structure; a couple of main electrodes consisting of conductors bonded to the ends of said rectifier unit, the coefficient of thermal expansion of said conductors approximating that of said pellets; and a mold glass including a glass material and a filling material for approximating the coefficient of thermal expansion of said glass material to that of said rectifier unit, said mold glass covering said rectifier unit and at least the rectifier unit side of said main electrodes, said glass material containing as its main component a glass of zinc borosilicate group consisting of, by weight, 60 to 70 percent of zinc oxide, 19 to 25 percent of boron oxide and 10 to 16 percent of silicon oxide.

Claim 10

A glass mold semiconductor device according to claim 7, in which said filling material consists essentially of granulated lead titanate 5 to 30 percent by weight of said glass material.

Claim 11

A glass mold semiconductor device according to claim 8, in which the grain size distribution of saId lead titanate is such that grains of lead titanate of 5 microns or less in diameter represent 40 percent or less of the whole lead titanate, while those grains of lead titanate of 50 microns or more in diameter make up 50 percent or less.

Claim 12

A glass mold semiconductor device according to claim 8, in which the ratio of lead oxide to titanium contained in said lead titanate ranges from 1.1 to 5.

Claim 13

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier units; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with said rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass comprising on an oxide basis at least 90 percent by weight of the combination of zinc oxide, boron oxide and silicon oxide and (b) 5 to 30 percent by weight based on the weight of the glass material of granulated lead titanate, said granulated lead titanate being distributed in the glass material whereby the coefficient of the thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 14

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier units; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with said rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass comprising on an oxide basis at least 90 percent by weight of the combination of zinc oxide, boron oxide and silicon oxide and (b) 5 to 30 percent by weight based on the weight of the glass material of granulated lead titanate, said granulated lead titanate being distributed in the glass material whereby the coefficient of the thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 15

The high-voltage semiconductor device of claim 11, wherein the zinc borosilicate glass consists essentially of on an oxide basis 60 to 70 weight percent zinc oxide, 19 to 25 weight percent boron oxide, and 10 to 16 weight percent silicon oxide, the remainder consisting essentially of lead oxide and aluminum oxide.

Claim 16

A high-voltage semiconductor device according to claim 11, wherein said fused mixture is made from granulated lead titanate in which no more than about 40 percent of said granulated lead titanate has a grain size of less than about 5 microns, and no more than about 5 percent of said lead titanate has a grain size larger than about 50 microns.

Claim 17

A high-voltage semiconductor device according to claim 11, in which the lead titanate has a lead oxide/titanium oxide ratio of from 1.1 to 5.

Claim 18

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier unit; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with said rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass consisting essentially of on an oxide basis 60 to 70 weight percent zinc oxide, 19 to 25 weight percent boron oxide and 10 to 16 weight percent silicon oxide, at least 90 percent of the zinc borosilicate glass being made from zinc oxide, boron oxide and silicon oxide, said zinc borosilicate glass further including lead oxide and aluminum oxide, and (b) 5 to 30 percent by weight based on the weight of said glass material of granulated lead titanate, said granulated lead titanate being distributed in the glass material whereby the coefficient of thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 19

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier unit; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with said rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass consisting essentially of on an oxide basis 60 to 70 weight percent zinc oxide, 19 to 25 weight percent boron oxide and 10 to 16 weight percent silicon oxide, at least 90 percent of the zinc borosilicate glass being made from zinc oxide, boron oxide and silicon oxide, said zinc borosilicate glass further including lead oxide and aluminum oxide, and (b) 5 to 30 percent by weight based on the weight of said glass material of granulated lead titanate, said granulated lead titanate being distributed in the glass material whereby the coefficient of thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 20

A high-voltage semiconductor device according to claim 15, wherein said fused mixture is formed from granulated lead titanate in which no more than 40 percent of the granulated lead titanate has a grain size of 5 microns or less and no more than 5 percent of the granulated lead titanate has a grain size of 50 microns or more.

Claim 21

A high-voltage semiconductor device according to claim 15, wherein said granulated lead titanate has a lead oxide/titanium oxide ratio of about 1.1 to 5.

Claim 22

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier unit; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with said rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass comprising on an oxide basis at least 90 percent by weight of the combination of zinc oxide, boron oxide and silicon oxide, and (b) 5 to 20 percent by weight based on the weight of said glass material of granulated quartz glass, said granulated quartz glass being distributed in the glass material whereby the coefficient of thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 23

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier unit; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with said rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass comprising on an oxide basis at least 90 percent by weight of the combination of zinc oxide, boron oxide and silicon oxide, and (b) 5 to 20 percent by weight based on the weight of said glass material of granulated quartz glass, said granulated quartz glass being distributed in the glass material whereby the coefficient of thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 24

A high-voltage semiconductor device according to claim 18, wherein said zinc borosilicate glass consists essentially of on an oxide basis 60 to 70 percent by weight zinc oxide, 19 to 25 percent by weight boron oxide and 10 to 16 percent by weight silicon oxide, the remainder consisting essentially of lead oxide and aluminum oxide.

Claim 25

The high-voltage semiconductor device according to claim 18, wherein said fused mixture is made from granulated quartz glass having a grain size of about 5 to 50 microns.

Claim 26

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier unit; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with the rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass consisting essentially of on an oxide basis 60 to 70 weight percent zinc oxide, 19 to 25 weight percent boron oxide and 10 to 16 weight percent silicon oxide, at least 90 percent of the zinc borosilicate glass being made from zinc oxide, boron oxide and silicon oxide, said zinc borosilicate glass further including lead oxide and aluminum oxide, and (b) 5 to 20 percent by weight based on the weight of said glass material of granulated quartz glass, said granulated quartz glass being distributed in the glass material whereby the coefficient of thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 27

A high-voltage semiconductor device covered with a glass material comprising: a rectifier unit including a number of semiconductor pellets having a PN junction, said semiconductor pellets being bonded with each other into a laminated structure; electrodes bonded to the ends of said rectifier unit; and a glass material covering said rectifier unit and at least a portion of the electrodes in close contact with the rectifier unit, said glass material comprising a fused mixture of (a) a zinc borosilicate glass consisting essentially of on an oxide basis 60 to 70 weight percent zinc oxide, 19 to 25 weight percent boron oxide and 10 to 16 weight percent silicon oxide, at least 90 percent of the zinc borosilicate glass being made from zinc oxide, boron oxide and silicon oxide, said zinc borosilicate glass further including lead oxide and aluminum oxide, and (b) 5 to 20 percent by weight based on the weight of said glass material of granulated quartz glass, said granulated quartz glass being distributed in the glass material whereby the coefficient of thermal expansion of the glass material approaches the coefficient of thermal expansion of the rectifier unit.

Claim 28

A high-voltage semiconductor device according to claim 21, wherein said fused mixture is made from glass quartz having a grain size of about 5 to 50 microns.

Claim 29

The high-voltage semiconductor device of claim 21, wherein the thickness of said glass material is about 150 microns.

Claim 30

The high-voltage semiconductor device of claim 18, wherein the thickness of said glass material is about 150 microns.

Claim 31

The high-voltage semiconductor device of claim 15, wherein the thickness of said glass material is about 150 microns.

Claim 32

The high-voltage semiconductor device of claim 11, wherein the thickness of said glass material is about 150 microns.