US3833894A
Expired / Lapsed
US
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Organic memory device
Assignee: International Business Machines Corp
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Filing: 1973-06-20
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Granted: 1974-09-03
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Expires: 1993-06-20
Abstract
Abstract The organic memory device described herein comprises an organic compound having a molecular structure which includes a mixed valence double well of an organic or organometallic redox couple separated by a sigma , i.e., a non-conjugated bridge, the two components of the redox couple being the respective end groups of the structure. The remainder of the molecule is chosen to effect electro-neutrality. The total molecular structure is such that in a film of the compound laid down on a substrate surface, the molecules assume dispositions such that their long axes are substantially perpendicular to the plane of the surface. Examples of the redox couple are: ferrocene, ferrocenium +; hydroquinone, quinone, tropylidine, tropylium+; and dihydropyridine, pyridinium +. This type of molecular structure exhibits a potential energy versus distance plot, wherein the term ''''distance'''' signifies the length of the molecule, i.e., from end group to end group of the redox couple, which defines first and second minimum potentials or wells separated by a maximum potential, the distance between the wells substantially corresponding to the length of the molecule. In operation, upon the application of a potential across a film of the compound, electrons are caused to tunnel from one minimum to the other to thereby define a given state.
Inventors
- 👤 A Aviram
- 👤 P Seiden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:42
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0009; G11C13/0014; B; B82; B82Y; B82Y10/00; G03; G03C; G03C1/00; G03C1/72; G03C1/73; G03C1/735; G06; G06N; G06N3/00; G06N3/002; H; H10; H10K; H10K10/00; H10K10/701; G11C2213/00; G11C2213/70; G11C2213/77; H10K19/00
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
52 words
An organic memory device as defined in claim 1 wherein the molecular structure of said compound is chosen such that a valence interchange occurs between said components of said redox couple during said tunneling and such that tautomerism is provided for the maintenance of said electro-neutrality during and after said valence interchange.
Claim 2
Dependent Claim
35 words
An organic memory device as defined in claim 1 wherein: each of said conductor means comprises a plurality of conductor pairs and wherein; said potential applying means includes means for energizing select pairs of conductors.
Claim 3
Dependent Claim
20 words
An organic memory device as defined in claim 2 wherein said organic compound is selected from the group consisting of
Claim 4
Dependent Claim
33 words
An organic memory device as defined in claim 4 wherein X1 and X2 are selected from the group consisting of I , Br , C1 , F , AcOBF4 , and TCNQ .
Claim 5
Dependent Claim
16 words
An organic memory device as defined in claim 2 wherein said organic compound has the structure
Claim 6
Dependent Claim
16 words
An organic memory device as defined in claim 2 wherein said organic compound has the structure
Claim 7
Dependent Claim
16 words
An organic memory device as defined in claim 2 wherein said organic compound has the structure
Claim 8
Dependent Claim
16 words
An organic memory device as defined in claim 2 wherein said organic compound has the structure
Claim 9
Dependent Claim
16 words
An organic memory device as defined in claim 2 wherein said organic compound has the structure
Claim 10
Dependent Claim
16 words
An organic memory device as defined in claim 3 wherein one of said conductors is transparent.
Claim 11
Dependent Claim
31 words
An organic memory device as defined in claim 11 and further including a laser source for applying energy to saiD film to raise electrons in said film through their maximum potential.
Claim 12
Dependent Claim
33 words
An organic memory device as defined in claim 12 wherein said device is caused to have non-destructive readout by providing as the film therein, an organic compound selected from the group consisting of
Claim 13
Dependent Claim
49 words
An organic memory device as defined in claim 12 wherein said device is caused to have non-destructive readout by providing as the film therein, an organic compound which exhibits the potential energy versus distance plot as shown in FIG. 4, said compound being selected from the group consisting of
Claim 14
Dependent Claim
47 words
An organic memory device as defined in claim 11 wherein said device is caused to have non-destructive readout by providing a film of an organic compound which exhibits the potential energy versus distance plot shown in FIG. 8, said compound being selected from the group consisting of
Claim 15
Dependent Claim
271 words
An organic memory device comprising: a film of an organic compound having a molecular structure which includes a mixed valence double wall of a redox couple separated by a non-conjugated bridge, the two components of the redox couple being the respective end groups of the molecular structure, the remainder of the molecular structure being chosen to effect electro-neutrality, the total molecular structure being of a nature such that, in a film of the compound laid down on a substrate surface, the molecules thereof assume dispositions whereby their respective axes are substantially perpendicular to the plane of said surface, said compound being characterized by a potential energy versus distance plot, wherein the term distance signifies substantially the length of molecule, which defines first and second minimum potentials separated by a maximum potential, and wherein the molecular structure of said compound is chosen such that a valence interchange occurs between said components of said redox couple during said tunneling and such that tautomerism is provided for the maintenance of said electro-neutrality during and after said valence interchange, the distance between said minimum potentials being at least 4 angstroms; a pair of photoconductive films disposed upon the upper and lower surfaces of said film and contiguous thereto; a pair of conductors in intimate contact with the upper and lower surfaces of said photoconductive films; an energy source connected to said conductors for applying a voltage across said photoconductive films; and a light source to decrease the resistivity of said photoconductive film when a voltage is applied thereacross, whereby electron tunneling is effected from one minimum potential to another minimum potential of said organic film.
Claim 16
Dependent Claim
20 words
An organic memory device as defined in claim 16 wherein said organic compound is selected from the group consisting of:
Claim 17
Dependent Claim
23 words
An organic memory device as defined in claim 17 wherein the distance between said minimum potentials is from about 4 to 100 Angstroms.
References Cited (Backward Citations)
US3119099A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-09-02 | 1978-03-04 | 1978-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-09-02 | 1982-03-04 | 1982-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-09-02 | 1986-03-04 | 1986-09-03 | $7700.00 | Window Closed / Lapsed |