Abstract A method of producing a distributed shunt for resistor film. The steps of this method comprising the selection of a conductive material whose sintering temperature is substantially lower than the sintering temperature of the resistive material; locating the conductive material in single or segmented form on the surfade of the resistive material intermediate end portions of the latter and firing the conductive material on the resistive material at the sintering temperature of the conductive material whereby the tendency to diffusion between said conductive and resistive materials is minimized and the resistivity of the resistive material is reduced while maintaining substantially constant the temperature coefficiient of resistivity and stability of the resistive material.
The method of producing a distributed shunt for resistor film, comprising the steps of firing a ruthenium-ruthenium oxide-glass frit resistor material onto an electrically non-conductive substrate at the sintering temperature of approximately 1000 degrees C of said resistive material, and thereafter firing silver-glass conductive material in segmented form on the surface of said fired resistive material intermediate end portions of the latter, said second firing being at the sintering temperature of approximately 550 degrees C of said conductive material, whereby the tendency to diffusion between said conductive and resistive materials is minimized and the resistivity of said resistive material is reduced due to the shunting effect of said conductive material on said resistive material, and whereby the temperature coefficient of resistivity and stability of said resistive material is maintained substantially constant.