US3832248A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabrication of insulated gate field effect transistors
Assignee: Texas Instruments Inc
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Filing: 1971-02-03
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Granted: 1974-08-27
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Expires: 1991-02-03
Abstract
Abstract AN INSULATED GATE FIELD EFFECT TRANSISTOR HAVING A SELFALIGNED GATE, REDUCED CAPACITANCE, AND LOWER SURFACE STEP HEIGHTS IS FABRICATED WITH THE USE OF A SILICON NITRIDE LAYER WHICH SERVES FIRST AS A DIFFUSION MASK, THEN AS AN OXIDATION BARRIER, AND ULTIMATELY AS A GATE DIELECTIRC. IN AN ALTERNATE EMBODIMENT, LOWER THRESHOLD VOLTAGES ARE ACHIEVED BY REPLACING THE INITIAL GATE DIELECTRIC WITH A THINNER DIELECTRIC HAVING A REDUCED SURFACE STATE DENSITY.
Inventors
- 👤 B Bazin
- 👤 J Albert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:46
CPC Classifications
H; H10; H10D; H10D99/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-26 | 1978-02-25 | 1978-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-26 | 1982-02-25 | 1982-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-26 | 1986-02-25 | 1986-08-27 | $7700.00 | Window Closed / Lapsed |