Method of manufacturing a semiconductor device
Abstract
Abstract A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE IN GOOD REPRODUCIBILITY AND YIELD WHICH COMPRISES PROVIDING A SINGLE CRYSTAL SEMICONDUCTOR SUBSTRATE OF ZINC BLENDE TYPE HAVING A (001) PLANE IN WHICH A $001$ ORIENTATION IS DEFINED AS A FOURFOLD ROTATION INVERSION AXIS, COATING THE (001) PLANE WITH A PROTECTIVE FIL, REMOVING BY MEANS OF A REACTION-LIMITED ETCHING SOLUTION THAT PART OF THE PROTECTIVE FILM WHICH IS DISPOSED BETWEEN TWO STRAIGHT LINES PARALLEL WITH THE DIRECTION IN WHICH THE AFOREMENTIONED (001) PLANE CAN BE ETCHED AT A UNIFORM SPEED SO AS TO FORM AN ETCHED GROOVE, AND FORMING AN EPITAXIALLY GROWN LAYER OF ANOTHER SINGLE CRYSTAL SEMICONDUCTOR IN THE ETCHED GROOVE.
Inventors
- 👤 T Matsui
- 👤 M Tokunaga
- 👤 M Nakagawa
- 👤 T Utagawa
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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