Metal-semiconductor small-surface contacts

Abstract

Abstract Metal-semiconductor low capacitance contacts are produced by depositing a first metal layer on a semiconductor surface in the pattern corresponding to a desired contact pattern, applying a second metal layer on the first metal layer and coating all exposed metal and semiconductor surfaces with an insulator layer. Then areas of the insulator above the second metal layer are removed to expose only the underlying second metal surface and a third metal is deposited on such exposed second metal surface in an amount sufficient to extend beyond the upper surface or plane of the insulator coating and form a sufficiently large surface for contacting a given electrical component.

Inventors

• 👤 H Kniepkamp

Bibliographic Details