← Back to Patent Explorer
US3828329A Expired / Lapsed US ⏱️ 0.0 years remaining

Single wall domain propagation arrangement

Assignee: AT&T Inc
•
Filing: 1972-07-24
•
Granted: 1974-08-06
•
Expires: 1992-07-24
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A field access, single wall domain propagation arrangement is defined by a pattern of ion implanted regions in a domain supporting layer. Either positive or negative magnetostriction effects result in changing pole patterns for domain movement in response to a magnetic field reorienting in the plane of domain layer.

Inventors

  • 👤 R Fischer
  • 👤 J North
  • 👤 R Wolfe

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 18:29
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0808; G11C19/0816

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 58 words
Magnetic domain propagation apparatus comprising a layer of material in which single wall domains can be moved, and a pattern of ion implanted regions in said layer said pattern having a geometry for defining therein a multistage path for movement of domains therealong in response to a periodic magnetic field reorienting cyclically in the plane of said layer.
Claim 2
Dependent Claim 58 words
Magnetic domain propagation apparatus comprising a layer of material in which single wall domains can be moved, and a pattern of ion implanted regions in said layer said pattern having a geometry for defining therein a multistage path for movement of domains therealong in response to a periodic magnetic field reorienting cyclically in the plane of said layer.
Claim 3
Dependent Claim 20 words
Apparatus in accordance with claim 1 wherein said layer coMprises a first surface and said regions are at said surface.
Claim 4
Dependent Claim 27 words
Apparatus in accordance with claim 2 wherein said layer has a magnetization normal to the plane of said layer and said ion implanted regions have in-plane magnetization.
Claim 5
Dependent Claim 22 words
Apparatus in accordance with claim 2 wherein said layer has an in-plane magnetization and said regions exhibit magnetization normal to the plane.
Claim 6
Dependent Claim 13 words
Apparatus in accordance with claim 2 wherein said layer comprises negative magnetostriction material.
Claim 7
Dependent Claim 13 words
Apparatus in accordance with claim 2 wherein said layer comprises positive magnetostriction material.
Claim 8
Dependent Claim 38 words
Apparatus in accordance with claim 2 wherein said layer adjacent said first surface is ion implanted except for a periodic pattern of nonimplanted regions which define said path at the interface with the implanted portions of said layer.
Claim 9
Dependent Claim 64 words
Apparatus in accordance with claim 1 wherein said layer comprises first and second sublayers each having a first surface, first and second periodic patterns of spaced apart ion implanted regions in said first and second sublayers at said first surfaces, said patterns being offset from one another in a manner to move single wall domains along said path in response to said in-plane field.
Claim 10
Dependent Claim 14 words
Apparatus in accordance with claim 2 also including means for supplying said in-plane field.

References Cited (Backward Citations)

US3643238A Cited
US3602911A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-08-05 1978-02-04 1978-08-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-08-05 1982-02-04 1982-08-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-08-05 1986-02-04 1986-08-06 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag