US3828231A
Expired / Lapsed
US
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Light amplifier using a semiconductor
Assignee: KDDI Corp
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Filing: 1972-12-18
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Granted: 1974-08-06
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Expires: 1992-12-18
Abstract
Abstract A light amplifier using a semiconductor, in which an elongated single semiconductor PN junction is used for amplifying an input light injected at an input face provided at one end of the PN junction along the junction plane of the PN junction. The semiconductor PN junction is driven by bias signals applied at a common ohmic electrode and a plurality of ohmic electrodes respectively provided at opposite sides of the PN junction with respect to the junction plane. A plurality of the ohmic electrodes are sequencially arranged overlying the PN junction in a longitudinal direction and are electrically isolated from one another, so that a plurality of discrete regions are provided in the PN junction corresponding to the respective electrodes. Two adjacent regions are employed as one unitary region and are driven by predetermined different forward bias currents to bias one of the two regions as an amplifying region and the other of the two regions as a saturable absorbing region. The amplifying region is disposed at the input side while the saturable absorbing region is disposed at the output side in each unitary region. The respective unitary regions are connected in cascade to provide a plurality of the unitary regions.
Inventors
- 👤 T Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:50
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/50; H01S3/00; H01S3/10; H01S3/11; H01S3/1123; H01S3/113; H01S5/30; H01S5/32; H01S5/06; H01S5/0601
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
311 words
A semiconductor light amplifier having a controllable threshold comprising, a light amplifier receiving in operation an input light signal and a plurality of bias signals for amplifying said input light signal when an intensity of said input light signal is greater than a threshold value, said light amplifier comprising threshold control means for controlling said threshold value in response to said bias signals, said light amplifier comprising amplifier means receptive in operation of said input light signal and a first of said bias signals for amplifying said input light signal and developing an output light signal, said amplifier means comprising gain control means receptive of said first bias signal for controlling a gain of said amplifier means in response to said first bias signal, and attenuation means receptive In operation of said amplifier means output light signal and a second of said bias signals for attenuating the amplifier means output light signal received to an intensity less than an intensity of said input light signal when an intensity of said input light signal is less than a first selected intensity value, for attenuating said amplifier means output light signal received to an intensity value less than an intensity of said input light signal when the intensity of said input light signal is greater than a second selected intensity value, and for attenuating said amplifier means output light signal to an intensity value greater than an intensity value of said input light signal when the intensity of said input light signal is between said first and second selected intensity values, said second selected intensity value being greater than said first selected intensity value, said attenuation means comprising attenuation control means receptive of said second bias signal for controlling a level of attenuation of said attenuation means in response to said second bias signal thereby determining said first and second selected intensity values.
Claim 2
Dependent Claim
311 words
A semiconductor light amplifier having a controllable threshold comprising, a light amplifier receiving in operation an input light signal and a plurality of bias signals for amplifying said input light signal when an intensity of said input light signal is greater than a threshold value, said light amplifier comprising threshold control means for controlling said threshold value in response to said bias signals, said light amplifier comprising amplifier means receptive in operation of said input light signal and a first of said bias signals for amplifying said input light signal and developing an output light signal, said amplifier means comprising gain control means receptive of said first bias signal for controlling a gain of said amplifier means in response to said first bias signal, and attenuation means receptive In operation of said amplifier means output light signal and a second of said bias signals for attenuating the amplifier means output light signal received to an intensity less than an intensity of said input light signal when an intensity of said input light signal is less than a first selected intensity value, for attenuating said amplifier means output light signal received to an intensity value less than an intensity of said input light signal when the intensity of said input light signal is greater than a second selected intensity value, and for attenuating said amplifier means output light signal to an intensity value greater than an intensity value of said input light signal when the intensity of said input light signal is between said first and second selected intensity values, said second selected intensity value being greater than said first selected intensity value, said attenuation means comprising attenuation control means receptive of said second bias signal for controlling a level of attenuation of said attenuation means in response to said second bias signal thereby determining said first and second selected intensity values.
Claim 3
Dependent Claim
38 words
A semiconductor light amplifier having a controllable threshold according to claim 1, comprising, a plurality of light amplifiers arranged in cascade with the first mentioned light amplifier, each of said light amplifiers comprising amplifier means and attenuation means.
Claim 4
Dependent Claim
260 words
A semiconductor light amplifier having a controllable threshold comprising, a generally prismatic semiconductor body having a longitudinal axis and two continguous regions of opposite conductivity type having a planer P-N junction therebetween, said P-N junction extending in a longitudinal direction of said prismatic semiconductor body and extending to opposite end surfaces of said prismatic body, an insulating layer disposed on a surface of a first of said contiguous regions, said insulating layer having a channel disposed in a longitudinal direction of said semiconductor body and of sufficient depth to expose a strip of surface of said region of said semiconductor body underlying said insulating layer, said semiconductor body having a surface for receiving in operation an input light signal, a plurality of electrically isolated ohmic electrodes disposed overlying said insulating layer and making contact with said strip of exposed surface of said semiconductor body underlying said insulating layer and a common electrode disposed on a surface of a second of said continguous regions opposite said plurality of ohmic electrodes for applying a plurality of bias signals to said semiconductor body for developing in operation amplification characteristics having a selected intensity threshold value for amplifying an input light signal having an intensity greater than said intensity threshold value and attenuating an input light signal having an intensity less than said intensity threshold value, said semiconductor body comprising intensity threshold control means for varying a value of said intensity threshold in response to bias signals, and means within said semiconductor body for applying said bias signals to said intensity threshold control means.
Claim 5
Dependent Claim
260 words
A semiconductor light amplifier having a controllable threshold comprising, a generally prismatic semiconductor body having a longitudinal axis and two continguous regions of opposite conductivity type having a planer P-N junction therebetween, said P-N junction extending in a longitudinal direction of said prismatic semiconductor body and extending to opposite end surfaces of said prismatic body, an insulating layer disposed on a surface of a first of said contiguous regions, said insulating layer having a channel disposed in a longitudinal direction of said semiconductor body and of sufficient depth to expose a strip of surface of said region of said semiconductor body underlying said insulating layer, said semiconductor body having a surface for receiving in operation an input light signal, a plurality of electrically isolated ohmic electrodes disposed overlying said insulating layer and making contact with said strip of exposed surface of said semiconductor body underlying said insulating layer and a common electrode disposed on a surface of a second of said continguous regions opposite said plurality of ohmic electrodes for applying a plurality of bias signals to said semiconductor body for developing in operation amplification characteristics having a selected intensity threshold value for amplifying an input light signal having an intensity greater than said intensity threshold value and attenuating an input light signal having an intensity less than said intensity threshold value, said semiconductor body comprising intensity threshold control means for varying a value of said intensity threshold in response to bias signals, and means within said semiconductor body for applying said bias signals to said intensity threshold control means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-05 | 1978-02-04 | 1978-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-05 | 1982-02-04 | 1982-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-05 | 1986-02-04 | 1986-08-06 | $7700.00 | Window Closed / Lapsed |