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US3825791A Expired / Lapsed US ⏱️ 0.0 years remaining

Field-effect storage tube

Assignee: International Business Machines Corp
•
Filing: 1972-06-30
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Granted: 1974-07-23
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Expires: 1992-06-30
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Abstract

Abstract A field-effect storage cathode ray tube with layer of electroluminescent phosphor external to the tube to allow removal and replacement thereof. The inner surface of the tube faceplace is contacted with a conductive mesh. A layer of semicondutor then contacts the exposed inner surface of the faceplate in the mesh openings and a layer of insulator contacts the layer of semiconductor. An array of conductive pins extends through the faceplate from the layer of phosphor in contact with its outer surface to the semiconductor within the respective mesh openings. A charge pattern written on the layer of insulator acts to vary local conductivity in the semiconductor and thus vary alternating current flow through local pins to cause a pattern of light emission from the phosphor corresponding to the charge pattern.

Inventors

  • 👤 B Kazan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 23:58
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J31/00; H01J31/08; H01J31/10; H01J31/12; H01J31/122

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 326 words
In a viewing storage tube using field-effect conductivity control to locally control the conductivity of semiconductor material therein in response to selected charge patterns created by the electron beam of an electron write gun, the improvement comprising: tube faceplate means having an outer surface and an inner surface with said inner surface having an array of conducting lines in contact therewith and arranged to form a grid pattern of conducting lines on said inner surface; a layer of semiconductor material of a single conductivity type in contact with both the lines of said array of conducting lines and the said inner surface of said faceplate means between the lines of said array of conducting lines; a charge storage means disposed adjacent to said layer of semiconductor material for producing in response to said electron beam selected charge patterns which vary the local conductivity of the adjacent layer of semiconductor material in accordance with said charge pattern; an array of conductive pins extending through said tube faceplate means with each pin of said array of conductive pins terminating at the outer surface of said faceplate means with a conductive cap, each of the said conductive pins of said array of conductive pins extending from points contacting said layer of semiconductor material between respective ones of said grid lines to its associated conductive cap on the said outer surface of said faceplate means; display means including a layer of transparent conductor means and a layer including electroluminescent phosphor material with said layer including electroluminescent phosphor material having one side thereof in contact with said layer of transparent conductor means and the other side thereof adhered by an insulating adhesive to said conductive caps such that local electroluminescence may be effected in said electroluminescent phosphor material in accordance with the pattern of local conductivity in said layer of semiconductor material; and means for making electrical contact to said array of conducting lines and said layer of transparent conducor means.
Claim 2
Dependent Claim 326 words
In a viewing storage tube using field-effect conductivity control to locally control the conductivity of semiconductor material therein in response to selected charge patterns created by the electron beam of an electron write gun, the improvement comprising: tube faceplate means having an outer surface and an inner surface with said inner surface having an array of conducting lines in contact therewith and arranged to form a grid pattern of conducting lines on said inner surface; a layer of semiconductor material of a single conductivity type in contact with both the lines of said array of conducting lines and the said inner surface of said faceplate means between the lines of said array of conducting lines; a charge storage means disposed adjacent to said layer of semiconductor material for producing in response to said electron beam selected charge patterns which vary the local conductivity of the adjacent layer of semiconductor material in accordance with said charge pattern; an array of conductive pins extending through said tube faceplate means with each pin of said array of conductive pins terminating at the outer surface of said faceplate means with a conductive cap, each of the said conductive pins of said array of conductive pins extending from points contacting said layer of semiconductor material between respective ones of said grid lines to its associated conductive cap on the said outer surface of said faceplate means; display means including a layer of transparent conductor means and a layer including electroluminescent phosphor material with said layer including electroluminescent phosphor material having one side thereof in contact with said layer of transparent conductor means and the other side thereof adhered by an insulating adhesive to said conductive caps such that local electroluminescence may be effected in said electroluminescent phosphor material in accordance with the pattern of local conductivity in said layer of semiconductor material; and means for making electrical contact to said array of conducting lines and said layer of transparent conducor means.
Claim 3
Dependent Claim 55 words
The viewing storage tube as set forth in claim 1 wherein said charge storage means includes means to selectively modulate the density of said selected charge patterns so that the said local conductivity of said layer of semiconductor material varies as a funCtion of said density to thereby provide output illumination with gray scale characteristics.
Claim 4
Dependent Claim 25 words
The viewing storage tube as set forth in claim 2 wherein the said local conductivity of said layer of semiconductor material increases with charge density.
Claim 5
Dependent Claim 25 words
The viewing storage tube as set forth in claim 2 wherein the said local conductivity of said layer of semiconductor material decreases with charge density.
Claim 6
Dependent Claim 39 words
The viewing storage tube as set forth in claim 2 wherein the said array of conducting lines comprises an array of horizontal and vertical conducting lines which conductively cross one another so as to form a conductive mesh pattern.
Claim 7
Dependent Claim 44 words
The viewing storage tube as set forth in claim 5 wherein single ones of the respective pins of said array of conductive pins contact said layer of semiconductor material within different ones of the openings of the respective openings of said conductive mesh pattern.

References Cited (Backward Citations)

US2500929A Cited
US2813223A Cited
US3262010A Cited
US3290537A Cited
US3334269A Cited
US3401294A Cited
US3344300A Cited
US3622825A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-07-22 1978-01-21 1978-07-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-07-22 1982-01-21 1982-07-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-07-22 1986-01-21 1986-07-23 $7700.00 Window Closed / Lapsed

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