Circuit for shifting and amplifying input voltages

Claim 2

A shifting and amplifying circuit comprising an input terminal adapted to be connected to a source of input potential, said input potential adapted to vary at least between a first predetermined input voltage and a second predetermined input voltage, an output terminal, a first enhancement-type semiconductive circuit element, a first deep-depletion type semiconductive circuit element, a first terminal connected to said first deep-depletion type semiconductive circuit element for connecting a first source of reference potential to said first deep-depletion type semiconductive circuit element, a second terminal connected to said first enhancement-type semiconductive circuit element for connecting a second sOurce of reference potential to said first enhancement-type semiconductive circuit element, means for connecting said input potential to said first enhancement-type semiconductive circuit element for rendering said first enhancement-type semiconductive circuit element conductive when said input potential is at said first predetermined input voltage thereby connecting said second source of reference potential to said output terminal, means for connecting said input potential to said first deep-depletion type semiconductive circuit element for rendering said first deepdepletion type semiconductive circuit element conductive when said input potential is at said second predetermined input voltage thereby connecting said first source of reference potential to said output terminal, said means for connecting said input potential to said first deep-depletion type semiconductive circuit element including an additional source of voltage adapted to be added to said input potential.

Claim 3

The invention according to claim 1 wherein said additional source of voltage is provided by a breakdown device connected between said input terminal and said first deep-depletion type semiconductive circuit element.

Claim 4

The invention according to claim 2 further comprising means for controlling said breakdown device.

Claim 5

The invention according to claim 3 wherein said breakdown device is a Zener diode having a predetermined breakdown voltage and said means for controlling said breakdown device is a current source for maintaining said Zener diode at its breakdown voltage.

Claim 6

The invention according to claim 4 wherein said current source is a second deep-depletion type semiconductive circuit element.

Claim 7

The invention according to claim 1 further comprising means for pulling up said input potential to a third predetermined input voltage for controlling conduction of said first enhancement-type semiconductive circuit element.

Claim 8

The invention according to claim 6 wherein said pull up means is a second enhancement-type semiconductive circuit element connected between said input terminal and said first enhancement-type semiconductive circuit element.

Claim 9

The invention according to claim 7 wherein said second enhancement-type semiconductive circuit element is adapted to connect said second source of reference potential to said input terminal.

Claim 10

The invention according to claim 1 further comprising means for providing a discharge path for said first deep-depletion type semiconductive circuit element when said first enhancement-type semiconductive circuit element is rendered conductive to render said first deep-depletion type semiconductive circuit element nonconductive.

Claim 11

The invention according to claim 9 wherein said means for providing a discharge path is a second deep-depletion type semiconductive circuit element.

Claim 12

A shifting and amplifying circuit comprising an input terminal, an output terminal, an enhancement-type semiconductive circuit element having first, second and third terminals, the second terminal of said enhancement-type semiconductive element coupled to said input terminal, a first deep-depletion type semiconductive circuit element having first, second and third terminals, the third terminals of the enhancement-type semiconductive circuit element and the deep-depletion type semiconductive circuit element coupled to said output terminal, a Zener diode having a predetermined breakdown voltage coupled between the second terminals of said enhancement-type semiconductive circuit element and said first deep-depletion type semiconductive circuit element, a second deep-depletion type semiconductive circuit element coupled between the first and second terminals of said first deep-depletion type semiconductive circuit element for controlling the current to said Zener diode, means for applying an input potential to said input terminal, said input potential adapted to vary between a first predetermined voltage and a second predetermined voltage, means for applYing first and second reference potentials to the first terminals respectively of said enhancement-type semiconductive circuit element and said first deep-depletion type semiconductive circuit element, the application of said first predetermined input voltage rendering said enhancement-type semiconductive circuit element conductive and said first deep-depletion type semiconductive circuit element nonconductive thereby connecting said first source of reference potential to said output terminal and application of said second predetermined input voltage rendering said first deep-depletion type semiconductive circuit element conductive and said enhancement-type semiconductive circuit element nonconductive thereby connecting said second source of reference potential to said output terminal, said Zenor diode translating the voltage applied at said input terminal to appropriate levels to control the conduction and nonconduction of said first deep-depletion type semiconductive circuit element.

Claim 13

A shifting and amplifying circuit comprising an input terminal, an output terminal, an enhancement-type semiconductive circuit element having first, second and third terminals, the second terminal of said enhancement-type semiconductive element coupled to said input terminal, a first deep-depletion type semiconductive circuit element having first, second and third terminals, the third terminals of the enhancement-type semiconductive circuit element and the deep-depletion type semiconductive circuit element coupled to said output terminal, a Zener diode having a predetermined breakdown voltage coupled between the second terminals of said enhancement-type semiconductive circuit element and said first deep-depletion type semiconductive circuit element, a second deep-depletion type semiconductive circuit element coupled between the first and second terminals of said first deep-depletion type semiconductive circuit element for controlling the current to said Zener diode, means for applying an input potential to said input terminal, said input potential adapted to vary between a first predetermined voltage and a second predetermined voltage, means for applYing first and second reference potentials to the first terminals respectively of said enhancement-type semiconductive circuit element and said first deep-depletion type semiconductive circuit element, the application of said first predetermined input voltage rendering said enhancement-type semiconductive circuit element conductive and said first deep-depletion type semiconductive circuit element nonconductive thereby connecting said first source of reference potential to said output terminal and application of said second predetermined input voltage rendering said first deep-depletion type semiconductive circuit element conductive and said enhancement-type semiconductive circuit element nonconductive thereby connecting said second source of reference potential to said output terminal, said Zenor diode translating the voltage applied at said input terminal to appropriate levels to control the conduction and nonconduction of said first deep-depletion type semiconductive circuit element.

Claim 14

The invention according to claim 11 wherein said second deep-depletion type semiconductive circuit element provides a residual drain current in order to keep said Zener diode at its breakdown voltage.

Claim 15

The invention according to claim 12 wherein said second source of reference potential is substantially equal to the breakdown voltage of said Zener diode.

Claim 16

A shifting and amplifying circuit comprising an input terminal, an output terminal, an enhancement-type FET having source, gate and drain electrodes, the gate electrode of said enhancement-type FET being coupled to said input terminal, a first deep-depletion type FET having source, gate and drain electrodes, the drain electrodes of said enhancement-type FET and deep-depletion type FET coupled to said output terminal, means for providing an additional source of voltage coupled between the gate electrodes of said enhancement-type FET and said first deep-depletion type FET, means for controlling said additional source of voltage coupled between the source and gate electrodes of said first deep-depletion type FET, means for applying an input potential to said input terminal adapted to vary between a first predetermined voltage and a second predetermined voltage, means for applying first and second reference potentials to the source electrodes respectively of said enhancement-type FET and deep-depletion type FET, said first predetermined input voltage being coupled to said enhancement-type FET to render said enhancement-type FET conductive thereby connecting said first source of reference potential to said output terminal, said second predetermined input voltage and said additional source of voltage coupled to said first deep-depletion type FET to render said first deep-depletion type FET conductive, thereby connecting said second source of reference potential to said output terminal.

Claim 17

A shifting and amplifying circuit comprising an input terminal, an output terminal, an enhancement-type FET having source, gate and drain electrodes, the gate electrode of said enhancement-type FET being coupled to said input terminal, a first deep-depletion type FET having source, gate and drain electrodes, the drain electrodes of said enhancement-type FET and deep-depletion type FET coupled to said output terminal, means for providing an additional source of voltage coupled between the gate electrodes of said enhancement-type FET and said first deep-depletion type FET, means for controlling said additional source of voltage coupled between the source and gate electrodes of said first deep-depletion type FET, means for applying an input potential to said input terminal adapted to vary between a first predetermined voltage and a second predetermined voltage, means for applying first and second reference potentials to the source electrodes respectively of said enhancement-type FET and deep-depletion type FET, said first predetermined input voltage being coupled to said enhancement-type FET to render said enhancement-type FET conductive thereby connecting said first source of reference potential to said output terminal, said second predetermined input voltage and said additional source of voltage coupled to said first deep-depletion type FET to render said first deep-depletion type FET conductive, thereby connecting said second source of reference potential to said output terminal.

Claim 18

The invention according to claim 14 wherein said source of additional voltage is provided by a breakdown device having a predetermined breakdown voltage and said means for controlling said source of additional voltage is a current source for maintaining said breakdown device at its breakdown voltage.

Claim 19

The invention according to claim 15 wherein said breakdown device is a Zener diode and said means for controlling said breakdown device is a second deep-depletion type FET for applying a residual drain current to said Zener diode.

Claim 20

The invention according to claim 16 wherein said first source of reference potential is substantially equal to the breakdown voltage of said Zener diode.

Claim 21

A shifting and amplifying circuit comprising an input terminal, an output terminal, first and second deep-depletion type FETS having source, gate and drain electrodes, the source electrodes being coupled together and the gate electrode of said first deep-depletion type FET coupled to the drain electrode of the second deep-depletion type FET, the gate electrode of said second deep-depletIon type FET and the drain electrode of said first deep-depletion type FET being coupled to the output terminal, first and second enhancement-type FETS having source, gate and drain electrodes, said source electrodes being coupled together, the gate electrode of the second enhancement-type FET being coupled to the gate electrode of the second deep-depletion type FET, the gate electrode of said first enhancement-type FET and the drain electrode of said second enhancement-type FET coupled to the input terminal, the drain electrode of said first enhancement-type FET being coupled to the output terminal, a Zener diode having a predetermined breakdown voltage coupled between the drain electrode of said second deep-depletion type FET and the drain electrode of said second enhancement-type FET, means for applying an input potential to said input terminal adapted to vary between a first predetermined voltage and a second predetermined voltage, means for applying first and second reference potentials to the source electrodes respectively of the enhancement-type FETS and deep-depletion type FETS, said first enhancement-type FET connecting said first source of reference potential to said input terminal thereby rendering said second enhancement-type FET nonconductive as said input potential varies between said first predetermined input voltage and said second predetermined input voltage, said second enhancement-type FET being rendered conductive when said source of input potential is at said first predetermined input voltage thereby connecting said first source of reference potential to said output terminal, said Zener diode providing a voltage to the gate electrode of said first deep-depletion type FET substantially equal to the sum of said input voltage and the breakdown voltage thereby rendering said first deep-depletion type FET conductive when said source of input potential is at said second predetermined input voltage thereby connecting said second source of reference potential to said output terminal, said second deep-depletion type FET providing a discharge path for said first deep-depletion type FET thereby rapidly rendering said first deep-depletion type FET nonconductive when said input terminal is at said first predetermined input voltage.

Claim 22

A shifting and amplifying circuit comprising an input terminal, an output terminal, first and second deep-depletion type FETS having source, gate and drain electrodes, the source electrodes being coupled together and the gate electrode of said first deep-depletion type FET coupled to the drain electrode of the second deep-depletion type FET, the gate electrode of said second deep-depletIon type FET and the drain electrode of said first deep-depletion type FET being coupled to the output terminal, first and second enhancement-type FETS having source, gate and drain electrodes, said source electrodes being coupled together, the gate electrode of the second enhancement-type FET being coupled to the gate electrode of the second deep-depletion type FET, the gate electrode of said first enhancement-type FET and the drain electrode of said second enhancement-type FET coupled to the input terminal, the drain electrode of said first enhancement-type FET being coupled to the output terminal, a Zener diode having a predetermined breakdown voltage coupled between the drain electrode of said second deep-depletion type FET and the drain electrode of said second enhancement-type FET, means for applying an input potential to said input terminal adapted to vary between a first predetermined voltage and a second predetermined voltage, means for applying first and second reference potentials to the source electrodes respectively of the enhancement-type FETS and deep-depletion type FETS, said first enhancement-type FET connecting said first source of reference potential to said input terminal thereby rendering said second enhancement-type FET nonconductive as said input potential varies between said first predetermined input voltage and said second predetermined input voltage, said second enhancement-type FET being rendered conductive when said source of input potential is at said first predetermined input voltage thereby connecting said first source of reference potential to said output terminal, said Zener diode providing a voltage to the gate electrode of said first deep-depletion type FET substantially equal to the sum of said input voltage and the breakdown voltage thereby rendering said first deep-depletion type FET conductive when said source of input potential is at said second predetermined input voltage thereby connecting said second source of reference potential to said output terminal, said second deep-depletion type FET providing a discharge path for said first deep-depletion type FET thereby rapidly rendering said first deep-depletion type FET nonconductive when said input terminal is at said first predetermined input voltage.