US3822153A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a double drift diode
Assignee: AT&T Inc
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Filing: 1973-03-26
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Granted: 1974-07-02
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Expires: 1993-03-26
Abstract
Abstract A METHOD FOR FABRICATING SEMICONDUCTOOR DIODES PARTICULARLY DOUBLE DRIFT REGION DIODES OF THE P+IPININ+ TYPE ADAPTED FOR USE IN OSCILLATORS OPERATING AT FREQUENCIES FROM ABOUT FOUR TO 30 GIGAHERTZ. A P LAYER AND THEN AN N LAYER ARE FORMED BY ION IMPLANTATION INTO A HIGH RESISTIVITY P-TYPE EPITAXIAL LAYER, I, DISPOSED OVER A P+TYPE SUBSTRATE. OVER THE P+TYPE EPITAXIAL LAYER A HIGH RESISTIV- ITY N-TYPE EPITAXIAL LAYER, ALSO I, IS FORMED AND SUBSEQUENTLY AN N-TYPE LAYER IS FORMED CONTIGUOUS WITH THE SURFACE OF THE N-TYPE EPITAXIAL LAYER.
Inventors
- 👤 Loach B De
- 👤 W Niehaus
- 👤 T Seidel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:59
CPC Classifications
H; H10; H10D; H10D99/00; H10D8/00; H10D8/40; Y; Y10; Y10S; Y10S148/00; Y10S148/01
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-07-01 | 1977-12-31 | 1978-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-07-01 | 1981-12-31 | 1982-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-07-01 | 1985-12-31 | 1986-07-02 | $7700.00 | Window Closed / Lapsed |