Semiconductor device with high conductivity and high resistivity collector portions to prevent surface inversion

Abstract

Abstract A SEMICONDUCTOR DEVICE COMPRISING A MONOCRYSTALLINE REGION OF A P-TYPE HIGH RESISTIVITY, AHEAVILY DOPED P-TYPE SUBSTRATE DEPOSITED FROM VAPOR PHASE AND HAVING A PLANE SURFACE COMMON WITH A PLANE SURFACE OF THE MONOCRYSTALLINE REGION, AN N-TYPE REGION FORMED IN TEH MONOCRYSTALLINE REGION BY INTRODUCING A DONOR TYPE IMPURITY FROM THE COMMON SURFACE INTO THE MONOCRYSTALLINE REGION, AND A HEAVILY DOPED P-TYPE THIN LAYER FORMED BETWEEN THE MONOCRYSTALLINE REGION AND THE SUBSTRATE BY INTRODUCING AN ACCEPTER IMPURITY INTO THE SURFACE OF THE MONOCRYSTALLINE REGION FACING THE SUBSTRATE BEFORE DEPOSITING THE HEAVILY DOPED SUBSTRATE ON THE MONOCRYSTALLINE REGION, WHEREBY A SPACE CHARGE LAYER WHICH MIGHT SPREAD FROM THE PN JUNCTION BETWEEN THE MONOCRYSTALLINE REGION AND THE N-TYPE REGION THROUGH THE P-TYPE MONOCRYSTALLING REGION DURING OPERATION OF THE DEVICE IS PREVENTED BY THE HEAVILY DOPED P-TYPE THIN LAYER FROM REACHING THE HEAVILY DOPED P-TYPE SUBSTRATE WHICH INCLUDES CRYSTALLOGRAPHICAL DEFECTS AND IS APT TO BREAK DOWN IN A LOW ELECTRIC FIELD BECAUSE OF THE CRYSTALLOGRAPHIC DEFECTS, AND ALOS AN INVERSION LAYER INDUCED IN THE MONOCRYSTALLINE REGION OF P-TYPE HIGH RESISTIVITY BY AN SIO2 FILM COVERING THE COMMON PLANE SURFACE IS INTERRUPTED BY THE HEAVILY DOPED P-TYPE SUBSTRATE.

Inventors

• 👤 K Usuda

Bibliographic Details