US3821039A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of epitaxially depositing a semiconductor material on a substrate
Assignee: RCA Corp
•
Filing: 1973-03-22
•
Granted: 1974-06-28
•
Expires: 1993-03-22
Abstract
Abstract In epitaxially depositing a layer of a single crystalline semiconductor material on a substrate by liquid phase epitaxy where there is a relatively large lattice mismatch between the semiconductor material and the material of the substrate, the semiconductor layer is deposited on a roughened surface of the substrate.
Inventors
- 👤 M Ettenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:26
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/12; Y; Y10; Y10S; Y10S117/00; Y10S117/913; Y10S148/00; Y10S148/065; Y10S148/067; Y10S148/072; Y10S148/138; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
23 words
The method in accordance with claim 1 in which the semiconductor material has a lattice substantially different from the lattice of the substrate.
Claim 2
Dependent Claim
24 words
The method in accordance with claim 2 in which the lattice mismatch between the semiconductor material and the substrate is greater than 0.3 percent.
Claim 3
Dependent Claim
42 words
The method in accordance with claim 3 in which the surface of the substrate is roughened sufficiently to introduce crystalline dislocation or work damage near the surface but not enough to cause a substantial non-uniformity in the general planarity of the surface.
Claim 4
Independent Claim
63 words
A method of making a semiconductor device having an epitaxial layer of a single crystalline semiconductor material on a substrate wherein there is a substantial lattice mismatch between the materials of the layer and the substrate comprising the steps of roughening a surface of the substrate, and epitaxially depositing the semiconductor material on said roughened surface of the substrate to form said layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-27 | 1977-12-27 | 1978-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-27 | 1981-12-27 | 1982-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-27 | 1985-12-27 | 1986-06-28 | $7700.00 | Window Closed / Lapsed |