Construction of monolithic chip and method of distributing power there-in for individaul electronic devices constructed thereon
Abstract
Abstract TO ELIMINATE PARASITIC VOLTAGE DROPS TO ELECTRODES OF SEMICONDUCTOR DEVICES BUILT ON A SEMICONDUCTOR CHIP OR WAFER, DUE TO THE USE OF AN ELEMENT OF A VOLTAGE AND CURRENT SUPPLY CONDUCTOR IN COMMON FOR SEVERAL SUCH SEMICONDUCTOR DEVICES, A SEPARATE PATH IS DIFFUSED FOR EACH ELECTRODE, ONTO SUCH CHIP OR WAFER AS A BUILT-UP POST OF THE BASIC SEMICONDUCTOR MATERIAL OF THE CHIP OR WAFER, AND THE BACK SURFACE OF THE CHIP OR WAFER IS USED AS A RELATIVELY WIDE AREA SURFACE AS A VOLTAGE SUPPLY BUS, WHICH MAY ALSO BE CONNECTED TO A METAL BASE FOR THE DOUBLE PURPOSE OF ESTABLISHING THAT SURFACE AT SOME SELECTED KNOWN POTENTIAL AND PROVIDING A GOOD HEAT SINK FOR THE CHIP OR WAFER. GENERALLY, THE POTENTIAL OF THE METAL BASE MAY BE PLACED AT GROUND, BUT NEED NOT BE.
Inventors
- 👤 J Langdon
Bibliographic Details
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