US3816845A
Expired / Lapsed
US
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Single crystal tunnel devices
Assignee: International Business Machines Corp
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Filing: 1971-09-23
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Granted: 1974-06-11
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Expires: 1991-09-23
Abstract
Abstract A tunneling device, or array of such devices, having at least one electrode which is a single crystal. Tunnel devices having two or more electrodes are shown, as are thin film Josephson devices having two single crystal electrodes. The electrodes of any device can be of the same or different material, and the crystallographic orientations of these electrodes can be the same or different. Although the tunnel barrier is usually an insulator, it can be other materials, or even a vacuum. In a particular embodiment, the barrier is an epitaxial layer. Both in-line and crossed-stripe geometries are used.
Inventors
- 👤 J Cuomo
- 👤 R Laibowitz
- 👤 A Mayadas
- 👤 R Rosenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:51
CPC Classifications
H; H10; H10D; H10D99/00; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/128; H10N69/00; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/873; Y10S505/874
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
82 words
A tunnel device, comprising: first and second superconducting electrodes at least one of which exhibits a single crystalline structure over an area thereof which is defined as a single crystallographic direction substantially normal to said area, said electrodes providing current carriers to said device; a tunnel barrier located between said electrodes and in contact with said area of said at least one electrode, said barrier having a potential barrier height associated therewith, said current carriers having energies less than said barrier height.
Claim 2
Dependent Claim
82 words
A tunnel device, comprising: first and second superconducting electrodes at least one of which exhibits a single crystalline structure over an area thereof which is defined as a single crystallographic direction substantially normal to said area, said electrodes providing current carriers to said device; a tunnel barrier located between said electrodes and in contact with said area of said at least one electrode, said barrier having a potential barrier height associated therewith, said current carriers having energies less than said barrier height.
Claim 3
Dependent Claim
15 words
The device of claim 1, wherein said tunnel barrier is less than about 60A thick.
Claim 4
Dependent Claim
18 words
The device of claim 1, wherein said tunnel barrier is sufficiently thin to support Josephson tunneling current therethrough.
Claim 5
Dependent Claim
17 words
The device of claim 1, wherein both said first and second electrodes exhibit said single crystalline structure.
Claim 6
Dependent Claim
16 words
The device of claim 4, wherein the crystallographic orientation of each said electrode is the same.
Claim 7
Dependent Claim
14 words
The device of claim 1, wherein said electrodes are comprised of the same material.
Claim 8
Dependent Claim
14 words
The device of claim 1, wherein said tunnel barrier exhibits said single crystalline structure.
Claim 9
Dependent Claim
12 words
The device of claim 1, where said tunnel barrier is an insulator.
Claim 10
Dependent Claim
94 words
A tunnel device for current carriers, comprising: a substrate, a first superconducting layer epitaxially located on said substrate, said layer having an area thereof over which there exists a single crystallographic direction substantially normal to said area, a barrier material layer having a potential barrier associated therewith formed on said first superconductive material, said barrier material layer having a thickness sufficiently thin to support Josephson tunneling currents therethrough, a second superconducting layer located on said barrier material, said current carriers moving between said first and second superconductor layers by tunneling through said barrier material.
Claim 11
Dependent Claim
94 words
A tunnel device for current carriers, comprising: a substrate, a first superconducting layer epitaxially located on said substrate, said layer having an area thereof over which there exists a single crystallographic direction substantially normal to said area, a barrier material layer having a potential barrier associated therewith formed on said first superconductive material, said barrier material layer having a thickness sufficiently thin to support Josephson tunneling currents therethrough, a second superconducting layer located on said barrier material, said current carriers moving between said first and second superconductor layers by tunneling through said barrier material.
Claim 12
Dependent Claim
18 words
The device of claim 9, where said first and second superconductive layers are comprised of the same material.
Claim 13
Dependent Claim
17 words
The device of claim 9, where the thickness of said barrier material layer is less than 100A.
Claim 14
Dependent Claim
22 words
The device of claim 9, where said first superconducting layer, said barrier material layer, and said second superconducting layer are epitaxial layers.
Claim 15
Dependent Claim
30 words
The device of claim 9, further including a second barrier material layer located on said second superconducting layer and a third superconducting layer located on said second barrier material layer.
Claim 16
Dependent Claim
12 words
The device of claim 9, where said barrier material is an insulator.
References Cited (Backward Citations)
US3626391A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-10 | 1977-12-10 | 1978-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-10 | 1981-12-10 | 1982-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-10 | 1985-12-10 | 1986-06-11 | $7700.00 | Window Closed / Lapsed |