Method for the simultaneous diffusion of impurities in silicon and semiconductor devices resulting from it
Abstract
Abstract A METHOD FOR THE SIMULTANEOUS DIFFUSION OF IMPURITIES INTO SILICON COMPRISING PERFORMING HEAT OXIDATION ON SECTIONS OF SIALICON IN ORDER TO OBTAIN A LAYER OF SILICA SIO2 ON EACH SECTION. THE OXIDIZED SECTIONS ARE SUBJECTED TO A PHOTOENGRAVING OPERATION IN ORDER TO OPEN "WINDOWS" NECESSARY FOR THE DIFFUSION OF A TYPE N LAYER AND THEN PASSED INTO A CLEANING BATH. THE RESULTING SECTIONS ARE LINED UP IN A QUARTZ TUBE CONTAINING AT LEAST ONE SOURCE OF AT LEAST TWO IMPURITIES, DESIGNED AS A FUNCTION OF THE DESIRED STRUCTURE WITH DIFFUSED LAYERS N A D P. THIS TUBE IS CHARGED AND PLACED INTO A CHAMBER WHICH IS HEATED TO A SUITABLE TEMPERATURE IN ORDER TO PERFORM THE SIMULTANEOUS DIFFUSION OF LAYERS N AND P.
Inventors
- 👤 G Dumas
Bibliographic Details
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