US3813291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a barrier layer field-effect transistor
Assignee: Telefunken Electronic GmbH
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Filing: 1971-07-28
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Granted: 1974-05-28
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Expires: 1991-07-28
Abstract
Abstract A METHOD OF MANUFACTURING A BARRIER LAYER FIELD EFFECT TRANSISTOR COMPRISING PRODUCING A CONTACT MAKING WINDOW IN AN INSULATING LAYER ON A SEMICONDUCTOR BODY, WHICH WINDOW IS WIDER THAN WIDTH OF THE CONTROL ELECTRODE TO BE PRODUCED, PRODUCING A METAL LAYER AT LEAST IN THE WINDOW, COVERING THE METAL LAYER WITH A MASKING LAYER RESISTANT TO ETCHING IN THE REGION OF THE WINDOW AND OF A WIDTH LARGER THAN THE WIDTH OF THE ELECTRODE TO BE PRODUCED, ETCHING AWAY THE EXCESS METAL FROM THE METAL LAYER AND UNDER ETCHING AWAY THE EXCESS METAL FROM THE METAL LAYER ELECTRODE NARROWER THAN THE MASKING LAYER.
Inventors
- 👤 V Joshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:44
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-05-27 | 1977-11-26 | 1978-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-05-27 | 1981-11-26 | 1982-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-05-27 | 1985-11-26 | 1986-05-28 | $7700.00 | Window Closed / Lapsed |