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US3811084A
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High voltage semiconductor rectifying device
Assignee: Hitachi Ltd
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Filing: 1971-08-06
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Granted: 1974-05-14
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Expires: 1991-08-06
Abstract
Abstract A high voltage semiconductor rectifying device comprising a rodlike stack of a plurality of silicon pellets and means to provide additional capacitance to silicon pellets nearer the a-c side electrode.
Inventors
- 👤 T Yosimura
- 👤 T Sasaki
- 👤 K Shima
- 👤 K Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:54
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H02; H02M; H02M7/00; H02M7/02; H02M7/04; H02M7/06; H02M7/10; H02M7/103; H02M7/106; H10W42/00; H10W72/00; H10W74/10; H10W74/111; H10W74/121; H10W90/00; Y; Y10; Y10S; Y10S257/00; Y10S257/916; Y10T; Y10T29/00; Y10T29/49; Y10T29/49995; Y10T29/49996
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
141 words
A high voltage semiconductor rectifying device comprising a plurality of rectifying units connected in series, each said rectifying unit including a rod-like stack of a plurality of silicon pellets, a pair of electrodes provided to opposite ends of said rod-like stack, each said electrode being provided with a lead, a first insulating member closely covering said rod-like stack, and a second insulating member covering said first insulating member, at least one conducting wire extending substantially parallel to said rectifying units from the a-c side electrode of a rectifying unit nearest to the a-c side toward the d-c side electrode of the next rectifying unit, said conducting wire being held at the same potential as said a-c side electrode of said rectifying unit nearest to the a-c side, and a third insulating member integrally enclosing said rectifying units and said conducting wire.
Claim 2
Dependent Claim
141 words
A high voltage semiconductor rectifying device comprising a plurality of rectifying units connected in series, each said rectifying unit including a rod-like stack of a plurality of silicon pellets, a pair of electrodes provided to opposite ends of said rod-like stack, each said electrode being provided with a lead, a first insulating member closely covering said rod-like stack, and a second insulating member covering said first insulating member, at least one conducting wire extending substantially parallel to said rectifying units from the a-c side electrode of a rectifying unit nearest to the a-c side toward the d-c side electrode of the next rectifying unit, said conducting wire being held at the same potential as said a-c side electrode of said rectifying unit nearest to the a-c side, and a third insulating member integrally enclosing said rectifying units and said conducting wire.
Claim 3
Dependent Claim
21 words
The high voltage semiconductor rectifying device according to claim 1, which has a plurality of conducting wires of lengths varying stepwise.
Claim 4
Dependent Claim
19 words
The high voltage semiconductor rectifying device according to claim 1, wherein said conducting wire has an end portion folded.
Claim 5
Dependent Claim
36 words
The high voltage semiconductor rectifying device according to claim 1, wherein said electrodes of said rectifying units are made of a high impurity concentration semiconductor member thicker than said silicon pellets and without any p-n junction.
Claim 6
Dependent Claim
21 words
The high voltage semiconductor rectifying device according to claim 1, wherein said insulating members are made of a non-combustible insulating resin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-05-13 | 1977-11-12 | 1978-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-05-13 | 1981-11-12 | 1982-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-05-13 | 1985-11-12 | 1986-05-14 | $7700.00 | Window Closed / Lapsed |