Magneto-sensitive device having pn junction

Claim 1

A two terminal positive feedback magnetic sensitive semiconductor device wherein a magnetic field is applied perpendicularly to the element comprising: a first conductivity type substrate, a first conductivity type layer formed on said substrate, a substantially U-shaped second conductivity type layer diffused into said first conductivity type layer, an elongated first conductivity type layer surrounded by said Ushaped layer for passing a current passing through the semiconductor device, a first terminal electrode connected to one end of said U-shaped layer, a second terminal electrode provided on one side of said substrate, a center electrode provided on said elongated layer and connected to the other end of said Ushaped layer and passing the current through a portion of the first conductive type layer forming a channel surrounded by the U-shaped layer, said channel being formed between depletion layers of PN junctions, thereby controlling the width of the channel due to Lorenz''s force in response to the strength of the magnetic field and controlling the input current passing through the channel.