Method for making self-aligning structure for charge-coupled and bucket brigade devices

Abstract

Abstract ANOTHER IN SELECTED AREAS. CRITICAL ALIGNMENTS BETWEEN MASKS AND SUBSEQUENT DIFFUSIONS ARE VOIDED. THE METHOD OF THE INVENTION MAY BE USED TO CREATE ALL TYPES OF SEMICONDUCTOR DEVICES, ESPECIALLY FIELD EFFECT TRANSISTORS AND CHARGE-COUPLED DEVICES EITHER SEPARATELY OR SIMULTANEOUSLY ON THE SAME BODY. INTERCONNECTED, BUT SELF-ISOLATING CONDUCTIVE LINES ON DIFFERENT LEVELS ARE ACHIEVED ON MONOLITHIC INTEGRATED SEMICONDUCTOR DEVICES. LAYERS OF INSULATING SEMICONDUCTORS MATERIAL ARE SEPARATED IN SELECTED AREAD BY DEPOSITS OF A DIELECTRIC DIFFUSION BARRIER MATERIAL AND DOPANTS TO RENDER THE LAYERS CONDUCTIVE ARE DIFFUSED THEREIN. THE DEPOSITS OF THE BURIED BARRIER MATERIAL ACT AS A DIFFUSION MASK AS TO PREVENT THE DIFFUSED DOPANTS FROM PENETRATING INTO SELECTED AREAS OF THE UNDERLYING SEMICONDUCTIVE LAYER A NON-CONLEAVE IN THE UNDERLYING SEMICONDUCTOR LAYERS A NON-CONDUCTIVE REGION. THIS CAUSES PORTIONS OF THE LAYERS OF INSULATING MATERIAL TO BE RENDERED CONDUCTIVE, WHILE STILL MAINTAINING THEIR INSULATING CHARACTERISTICS IN SELECTED REGIONS, THEREBY ELECTRICALLY SEPARATING THE LAYERS ONE FORM

Inventors

• 👤 R Troutman

Bibliographic Details