High sensitivity semiconductor strain gauge

Claim 1

A semiconductor strain trAnsducer assembly, comprising: a layer of piezoelectric semiconductor material of single conductivity type having a strain sensitive resistivity along a predetermined direction, said layer being chosen from the group consisting essentially of cadmium sulfide, zinc sulfide, cadmium selenide, zinc selenide, cadmium oxide, zinc oxide, cadmium telluride, zinc telluride, aluminum nitride, gallium nitride, indium nitride, thallium nitride, aluminum phosphide, gallium phosphide, indium phosphide, thallium phosphide, aluminum arsenide, gallium arsenide, indium arsenide, thallium arsenide, aluminum antimonide, gallium antimonide, indium antimonide, thallium antimonide, and alloys thereof so that said resistivity is strain sensitive by a gauge factor of at least 100; electrical contacts defining a current path parallel to said predetermined direction; means for applying a voltage across said electrical contacts; means for measuring the resistance between said electrical contacts while said voltage is applied; means for securing said layer to a member to which strain forces under investigation are to be applied; and means for applying said strain forces under investigation to said member.