US3798084A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Simultaneous diffusion processing
Assignee: International Business Machines Corp
•
Filing: 1972-08-11
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Granted: 1974-03-19
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Expires: 1992-08-11
Abstract
Abstract Emitter and base regions of a semiconductor device may be formed simultaneously by a capsule diffusion with a source containing both N type and P type dopants. The dopants utilized must have substantially different diffusion rates. For instance, for a silicon semiconductor substrate, the source may be formed of boron and arsenic-doped silicon.
Inventors
- 👤 V Lyons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:53
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P32/19; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/04; Y10S148/041; Y10S148/151; Y10S148/167
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
16 words
The method of claim 1 wherein said homogEneous dopant diffusion source comprises boron, arsenic and silicon.
Claim 2
Dependent Claim
63 words
The method of claim 2 wherein said homogeneous dopant diffusion source is formed by the method comprising introducing into a container a finely-ground homogeneous dopant diffusion source comprising boron and silicon, and further introducing into said elongated container a master source comprising arsenic and silicon and heating said boron, arsenic and silicon until a condition of substantial equilibrium is established within the container.
Claim 3
Dependent Claim
35 words
The method of claim 1 wherein said diffusion source comprises an alloy which includes at least a semiconductor material and at least two vaporizable elemental dopants for semiconductor materials present in a single solid state.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said semiconductor material is selected from the group consisting of silicon, germanium, II-VI compound semiconductors, and III-V compound semiconductors.
Claim 5
Independent Claim
128 words
A method for simultaneously producing emitter and base regions in a semiconductor device which comprises: establishing a heating and vaporizing zone in a closed capsule; placing a semiconductor substrate having a mask with an opening on its surface in one portion of said capsule; placing a diffusion source which comprises a semiconductor homogeneously doped with two different types of elemental impurities having substantially different rates of diffusion in another portion of said capsule; heating said capsule to a temperature to cause vaporization of said impurities from the said semiconductor solvent, maintaining the temperature of said diffusion mixture above said temperature for a time sufficient to permit diffusion of said impurities into said semiconductor whereby said emitter and base regions are formed, recovering a doped semiconductor from said capsule.
Claim 6
Dependent Claim
25 words
The method of claim 6 wherein said semiconductor substrate is selected from the group consisting of silicon, germanium, II-VI compound semiconductors, and III-V compound semiconductors.
Claim 7
Dependent Claim
22 words
The method of claim 6 wherein said impurities are present in a combined concentration of about 2.5 X 1020 atoms per cc.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-18 | 1977-09-17 | 1978-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-18 | 1981-09-17 | 1982-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-18 | 1985-09-17 | 1986-03-19 | $7700.00 | Window Closed / Lapsed |