US3798062A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a planar device
Assignee: Telefunken Electronic GmbH
•
Filing: 1971-09-27
•
Granted: 1974-03-19
•
Expires: 1991-09-27
Abstract
Abstract A method of manufacturing a planar device includes removing at least a portion of an insulating layer used as a mask for producing a region or regions in a semiconductor body and replacing this insulating layer with a layer of silicon nitride.
Inventors
- 👤 W Mroczeck
- 👤 W Scherber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6512; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/692; H10P14/6921; H10P14/69215; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10S148/114; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
22 words
A method as defined in claim 1, and comprising producing said silicon nitride layer from SiH4 and N2 in a glow discharge.
Claim 2
Dependent Claim
20 words
A method as defined in claim 2, and comprising depositing said silicon nitride layer at a temperature of about 350*C.
Claim 3
Dependent Claim
24 words
A method as defined in claim 1, and comprising carrying out said cleaning of said surface of said semiconductor body in an oxygen atmosphere.
Claim 4
Dependent Claim
25 words
A method as defined in claim 1, and comprising carrying out said cleaning of said surface of said semiconductor body in an inert gas atmosphere.
Claim 5
Dependent Claim
35 words
A method as defined in claim 1, and comprising carrying out said cleaning of said surface of said semiconductor body in the same apparatus as is used for the deposition of said silicon nitride layer.
Claim 6
Dependent Claim
19 words
A method as defined in claim 1, further comprising forming a further insulating layer on said silicon nitride layer.
Claim 7
Dependent Claim
17 words
A method as defined in claim 7, and comprising using silicon dioxide as said further insulating layer.
Claim 8
Dependent Claim
27 words
A method as defined in claim 7, and comprising forming said further insulating layer in the same apparatus as is used for forming the silicon nitride layer.
Claim 9
Dependent Claim
38 words
A method as defined in claim 1, further comprising forming a contact making window in said silicon nitride layer for each of said regions in said semiconductor body for providing an opening for a contact to be applied.
Claim 10
Dependent Claim
55 words
A method as defined in claim 1, further comprising forming a further insulating layer on said silicon nitride layer and forming a contact making window in said silicon nitride layer and in said further insulating layer for each of said regions in said semiconductor body for providing an opening for a contact to be applied.
Claim 11
Dependent Claim
29 words
A method as defined in claim 1 wherein all of the insulating layer on the surface of the semiconductor body is removed prior to depositing the silicon nitride layer.
References Cited (Backward Citations)
US3281915A
Cited
US3503813A
Cited
US3438873A
Cited
US3455020A
Cited
US3649886A
Cited
US3607697A
Cited
US3658678A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-18 | 1977-09-17 | 1978-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-18 | 1981-09-17 | 1982-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-18 | 1985-09-17 | 1986-03-19 | $7700.00 | Window Closed / Lapsed |