US3796927A
Expired / Lapsed
US
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Three dimensional charge coupled devices
Assignee: AT&T Inc
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Filing: 1970-12-16
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Granted: 1974-03-12
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Expires: 1990-12-16
Abstract
Abstract The specification describes a new class of semiconductor devices in which the charge is controllably translated in three dimensions. Translation control circuits can be disposed on both sides of the usual semiconductor wafer giving a new dimension in the design of logic and memory devices. In the exemplary specific embodiment the concept is described in connection with a shift register. Extension to logic circuits, e.g., to perform crossover and fan-in functions, is straightforward.
Inventors
- 👤 W Boyle
- 👤 G Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:38
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/35; G11C19/00; G11C19/28; G11C19/282; G11C19/287; H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H04; H04Q; H04Q3/00; H04Q3/42; H04Q3/52; H04Q3/521; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/386
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
138 words
A charge coupled apparatus comprising a thin charge storage medium, an insulating layer covering both major sides of the charge storage medium, a series of serially arranged drive electrodes on each insulating layer for forming at least one charge coupled information channel beneath each insulating layer, electrical terminal means for applying sequential drive voltages to each series of drive electrodes whereby charge storage sites can be formed in the medium and charge can be sequentially transferred between storage sites along the channels, and electrical terminal means for biasing at least one selected pair of electrodes, one on each side of the storage medium, whereby charge at a storage site in one channel can be transferred through and within the charge storage medium to a storage site in a channel on the other side of the charge storage medium.
Claim 2
Dependent Claim
138 words
A charge coupled apparatus comprising a thin charge storage medium, an insulating layer covering both major sides of the charge storage medium, a series of serially arranged drive electrodes on each insulating layer for forming at least one charge coupled information channel beneath each insulating layer, electrical terminal means for applying sequential drive voltages to each series of drive electrodes whereby charge storage sites can be formed in the medium and charge can be sequentially transferred between storage sites along the channels, and electrical terminal means for biasing at least one selected pair of electrodes, one on each side of the storage medium, whereby charge at a storage site in one channel can be transferred through and within the charge storage medium to a storage site in a channel on the other side of the charge storage medium.
Claim 3
Dependent Claim
12 words
The device of claim 1 in which the storage medium is silicon.
Claim 4
Dependent Claim
177 words
A charge coupled shift register comprising a thin charge storage medium, an insuLating layer covering both major sides of said charge storage medium, a plurality of essentially parallel series of serially arranged drive electrodes on each insulating layer, each series forming a charge coupled information channel in the charge storage medium, means interconnecting, in a direction essentially orthogonal to the information channels, drive electrodes from each series of the plurality, electrical terminal means for applying sequential drive voltages to the interconnected drive electrodes whereby charge storage sites can be formed simultaneously in each information channel and charge can be transferred sequentially between storage sites in each channel, and electrical terminal means for biasing selected pairs of electrodes, the electrodes of each pair located on opposite sides of the charge storage medium and approximately aligned through the thickness of the medium, whereby charge at storage sites in the information channels on one side of the medium can be transferred through and within the charge storage medium to information channels on the other side of the charge storage medium.
Claim 5
Dependent Claim
177 words
A charge coupled shift register comprising a thin charge storage medium, an insuLating layer covering both major sides of said charge storage medium, a plurality of essentially parallel series of serially arranged drive electrodes on each insulating layer, each series forming a charge coupled information channel in the charge storage medium, means interconnecting, in a direction essentially orthogonal to the information channels, drive electrodes from each series of the plurality, electrical terminal means for applying sequential drive voltages to the interconnected drive electrodes whereby charge storage sites can be formed simultaneously in each information channel and charge can be transferred sequentially between storage sites in each channel, and electrical terminal means for biasing selected pairs of electrodes, the electrodes of each pair located on opposite sides of the charge storage medium and approximately aligned through the thickness of the medium, whereby charge at storage sites in the information channels on one side of the medium can be transferred through and within the charge storage medium to information channels on the other side of the charge storage medium.
Claim 6
Dependent Claim
23 words
The shift register of claim 3 with means for translating charge laterally between parallel channels on at least one side of the medium.
Claim 7
Dependent Claim
24 words
The shift register of claim 3 in which the channels on opposite sides of the storage medium are offset with respect to each other.
Claim 8
Dependent Claim
20 words
The shift register of claim 3 in which the channels on opposite sides are aligned with respect to each other.
Claim 9
Dependent Claim
13 words
The shift register of claim 3 in which the storage medium is silicon.
Claim 10
Dependent Claim
14 words
The shift register of claim 7 in which the insulating layer is silicon dioxide.
Claim 11
Dependent Claim
19 words
The shift register of claim 3 in which the electrode strips extend in a direction orthogonal to the channels.
Claim 12
Dependent Claim
203 words
A charge coupled switching device for interconnecting one or more of a plurality of incoming information channels with one or more of a plurality of outgoing information channels comprising a thin charge storage medium, an insulating layer covering both major sides of the charge storage medium, a plurality of essentially parallel series of drive electrodes on each insulating layer, each series forming a charge coupled information channel in the charge storage medium with the plurality of series on one layer extending in a direction different from that of the plurality of series on the other layer so that as viewed through the thickness of the charge storage medium the information channels intersect, electrical terminal means for applying sequential drive voltages to each series of drive electrodes whereby charge storage sites can be formed in the medium and charge can be transferred between storage sites along the channels, and electrical terminal means for biasing selected pairs of electrodes located at the points of intersection of the information channels so that charge at a storage site in one channel can be transferred through and within the charge storage medium to a storage site in a channel on the other side of the charge storage medium.
Claim 13
Dependent Claim
203 words
A charge coupled switching device for interconnecting one or more of a plurality of incoming information channels with one or more of a plurality of outgoing information channels comprising a thin charge storage medium, an insulating layer covering both major sides of the charge storage medium, a plurality of essentially parallel series of drive electrodes on each insulating layer, each series forming a charge coupled information channel in the charge storage medium with the plurality of series on one layer extending in a direction different from that of the plurality of series on the other layer so that as viewed through the thickness of the charge storage medium the information channels intersect, electrical terminal means for applying sequential drive voltages to each series of drive electrodes whereby charge storage sites can be formed in the medium and charge can be transferred between storage sites along the channels, and electrical terminal means for biasing selected pairs of electrodes located at the points of intersection of the information channels so that charge at a storage site in one channel can be transferred through and within the charge storage medium to a storage site in a channel on the other side of the charge storage medium.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-11 | 1977-09-10 | 1978-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-11 | 1981-09-10 | 1982-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-11 | 1985-09-10 | 1986-03-12 | $7700.00 | Window Closed / Lapsed |