US3795554A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for simultaneous diffusion of group iii-group v intermetallic compounds into semiconductor wafers
Assignee: Infineon Technologies Americas Corp
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Filing: 1972-12-20
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Granted: 1974-03-05
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Expires: 1992-12-20
Abstract
Abstract A MONOCRYSTALLINE SILICON WAFER IS COVERED WITH A SILICON DIOXIDE COATING, AND WINDOWS ARE SELECTIVELY FORMED IN THE SILICON DIOXIDE COATING. THE WAFER IS THEN LOADED INTO A DIFFUSION CHAMBER WHICH CONTAINS A GALLIUM ARSENIDE COMPOUND IN PURE STOICHIOMETRIC FORM AS WELL AS A MASS OF PURE GALLIUM. THE TEMPERATURE OF THE DIFFUSION VESSEL IS THEN RAISED TO CAUSE DIFFUSION INTO THE WATER TO FORM A PLURALITY OF JUNCTIONS OF GIVEN SHAPE THEREIN WITH A SINGLE DIFFUSION STEP. D R A W I N G
Inventors
- 👤 W Tarn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:47
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B31/00; C30B31/06; C30B31/18; C30B31/185; H10D; H10D99/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-04 | 1977-09-03 | 1978-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-04 | 1981-09-03 | 1982-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-04 | 1985-09-03 | 1986-03-05 | $7700.00 | Window Closed / Lapsed |