Abstract A metal ceramic bond wherein the ceramic portion and the metal part, which is alloyed with an active metal in the bonding zone or which contains the bonding zone in the form of an interpolated formed member that is adapted to the bonding surface, is kept below the melting point, in a vacuum, and under pressure of 5 to 50 kp/mm2, for a period up to 25 hours. The metallic bonding zone, preferably, consists of a binary alloy with an active metal content of 0.05 to 15 atom-percent and the ceramic part is preferably sintered corrundum or sapphire (Al2O3). The base metal used for the binary alloy is copper, silver, nickel or iron. The method may be used advantageously, for example, in the production of electron tubes and semiconductor components.
The process as claimed in claim 1, wherein: said ceramic body includes: sintered corrundum or sapphire (A1203)
Claim 2
Dependent Claim
35 words
The process as claimed in claim 2, wherein: said active metal is selected from alkali metals, alkali earth metals, elements of the III, IV or V secondary group of the Periodic System or actinide metals.
Claim 3
Dependent Claim
15 words
The process as claimed in claim 3, wherein: said actinide metal is thorium or uranium.
Claim 4
Dependent Claim
40 words
The process as claimed in claim 2, wherein the ambient environment is a protective gas atmosphere and including the step of introducing an active metal in the form of chromium while maintaining oxygen under partial pressure in the ambient atmosphere.
Claim 5
Dependent Claim
23 words
The process as claimed in claim 2, wherein: said base metal of the binary alloy is selected from copper, silver, nickel or iron.