US3794835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image pickup device
Assignee: Hitachi Ltd
•
Filing: 1971-04-06
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Granted: 1974-02-26
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Expires: 1991-04-06
Abstract
Abstract A light conversion element used for a vidicon image pickup target characterized in that an amorphous semiconductor comprising more than 50 atomic percent of selenium and/or sulfur is disposed directly on a IVa group silicon, germanium or similar semiconductor single crystal or crystalline layer, or on such a semiconductor single crystal or crystalline layer with a very thin insulation layer, such as a very thin oxide layer interposed therebetween whereby a hetero-junction is formed in the element.
Inventors
- 👤 T Hirai
- 👤 E Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:43
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/072; Y10S257/00; Y10S257/917
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
27 words
A light electric conversion element according to claim 1, wherein said semiconductor substrate is made of an element selected from the group consisting of germanium and silicon.
Claim 2
Dependent Claim
26 words
A light electric conversion element according to claim 1, wherein a very thin insulation layer is interposed between said semiconductor substrate and said amorphous semiconductor layer.
Claim 3
Dependent Claim
27 words
A light electric conversion element according to claim 3, wherein said semiconductor substrate is made of an element selected from the group consisting of germanium and silicon.
Claim 4
Dependent Claim
53 words
An image pickup element in the form of a photodiode comprising a hetero-junction formed in the region of contact between an amorphous semiconductor and a semiconductor substrate selected from the group consisting of silicon and germainium, wherein said amorphous semiconductor comprises 90 atomic percent of selenium and approximately 10 atomic percent of arsenic.
Claim 5
Dependent Claim
59 words
An image pickup element in the form of a photodiode comprising a hetero-junction formed in the region of contact between an amorphous semiconductor and a semiconductor substrate selected from the group consisting of silicon and germanium, wherein said amorphous semiconductor comprises 40 atomic percent of sulfur, substantially 20 atomic percent of selenium, and substantially 40 atomic percent of arsenic.
Claim 6
Dependent Claim
27 words
An image pickup element as defined in claim 6, wherein a thin insulation layer comprising an oxide is interposed between said amorphous semiconductor and said semiconductor substrate.
References Cited (Backward Citations)
US2687484A
Cited
US2644852A
Cited
US2826725A
Cited
US3322955A
Cited
US3268764A
Cited
US3439240A
Cited
US3403284A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-25 | 1977-08-27 | 1978-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-25 | 1981-08-27 | 1982-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-25 | 1985-08-27 | 1986-02-26 | $7700.00 | Window Closed / Lapsed |