US3790829A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermoelectromagnetic energy conversion system
Assignee: Individual
•
Filing: 1972-07-13
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Granted: 1974-02-05
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Expires: 1992-07-13
Abstract
Abstract A thermoelectromagnetic energy conversion system includes a p-n semiconductor junction having a space charge region on either side thereof and a magnet providing a magnetic flux through the space charge region in a direction parallel to the junction, and a source of thermal energy. Electrical contact may be made to two end regions of the junction which are spaced apart in a longitudinal direction perpendicular to the flux direction and centrally located dielectric regions on either side of the depletion region permit electrical communication between the end regions only through the depletion region. As electrons and holes which are thermally generated within the space charge region drift toward the edges thereof, the magnetic flux provides a longitudinally directed force on the mobile carriers which establishes a voltage potential between the two end regions.
Inventors
- 👤 G Roth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:25
CPC Classifications
H; H02; H02N; H02N11/00; H02N11/002; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
107 words
A thermoelectromagnetic energy conversion system comprising: a thermal energy source; a generally planar semiconductor p-n junction in energy receiving relationship with the thermal energy source, the p-n junction having a depletion region extending on either side thereof; means for generating a magnetic field through the depletion region in a transverse direction parallel to the p-n junction; means for providing electrical contact to at least one side of the p-n junction at locations spaced apart aLong a longitudinal dimension parallel to the junction; and means in communication with the depletion region on the at least one side of the junction for providing electrical insulation between the electrical contacts.
Claim 2
Dependent Claim
107 words
A thermoelectromagnetic energy conversion system comprising: a thermal energy source; a generally planar semiconductor p-n junction in energy receiving relationship with the thermal energy source, the p-n junction having a depletion region extending on either side thereof; means for generating a magnetic field through the depletion region in a transverse direction parallel to the p-n junction; means for providing electrical contact to at least one side of the p-n junction at locations spaced apart aLong a longitudinal dimension parallel to the junction; and means in communication with the depletion region on the at least one side of the junction for providing electrical insulation between the electrical contacts.
Claim 3
Dependent Claim
95 words
A semiconductor device having a p-n junction with a depletion region on either side thereof which is insertable in a magnetic field passing through the depletion region in a transverse direction generally parallel to the p-n junction, the depletion region extending to an insulating medium on at least one side of the junction, said medium providing a high resistivity path along a longitudinal dimension parallel to the junction to permit accumulation along the longitudinal path of a potential gradient caused by interaction of mobile carriers generated within the depletion region with the transverse magnetic field.
Claim 4
Dependent Claim
95 words
A semiconductor device having a p-n junction with a depletion region on either side thereof which is insertable in a magnetic field passing through the depletion region in a transverse direction generally parallel to the p-n junction, the depletion region extending to an insulating medium on at least one side of the junction, said medium providing a high resistivity path along a longitudinal dimension parallel to the junction to permit accumulation along the longitudinal path of a potential gradient caused by interaction of mobile carriers generated within the depletion region with the transverse magnetic field.
Claim 5
Dependent Claim
136 words
A thermoelectromagnetic device comprising a junction lying in a plane having a contact potential thereacross and producing a region having an electric field intensity on at least one side of the junction, the electric field intensity having a direction generally perpendicular to the plane of the junction and accelerating mobile charge carriers which are generated within the region of magnetic field intensity in a direction perpendicular to the plane of the junction, and a plurality of electrical contacts in low resistance communication with the region of electric field intensity on the at least one side of the junction, the contacts being spaced apart along a longitudinal direction parallel to the plane of the junction and there being no path of high conductivity interconnecting adjacent pairs of contacts on the at least one side of the junction.
Claim 6
Dependent Claim
136 words
A thermoelectromagnetic device comprising a junction lying in a plane having a contact potential thereacross and producing a region having an electric field intensity on at least one side of the junction, the electric field intensity having a direction generally perpendicular to the plane of the junction and accelerating mobile charge carriers which are generated within the region of magnetic field intensity in a direction perpendicular to the plane of the junction, and a plurality of electrical contacts in low resistance communication with the region of electric field intensity on the at least one side of the junction, the contacts being spaced apart along a longitudinal direction parallel to the plane of the junction and there being no path of high conductivity interconnecting adjacent pairs of contacts on the at least one side of the junction.
Claim 7
Dependent Claim
54 words
The thermoelectromagnetic device as set forth in claim 3 above, further comprising a magnet providing a magnetic field through the region of electric field intensity in a transverse direction parallel to the plane of the junction and a source of thermal energy positioned to transfer thermal energy to the region of electric field intensity.
Claim 8
Dependent Claim
24 words
The invention as set forth in claim 3 above, wherein the junction is formed by p and n type semiconductor materials in abutting relationship.
Claim 9
Dependent Claim
45 words
The invention as set forth in claim 5 above, further comprising a barrier of insulating material positioned between adjacent contacts, the insulating barrier being in communication with the region of electric field intensity and permitting conduction of current between adjacent contacts only through said region.
Claim 10
Dependent Claim
39 words
The invention as set forth in claim 6 above, wherein the p and n semiconductor materials are both predominantly silicon and the insulating barrier is of the class of materials consisting of silicon monoxide, silicon dioxide and silicon nitride.
Claim 11
Dependent Claim
35 words
The invention as set forth in claim 5 above, wherein the p and n semiconductor materials are both predominantly from the class of materials consisting of germanium, silicon, gallium arsenide, gallium phosphide and silicon carbide.
Claim 12
Dependent Claim
99 words
For use in a thermoelectromagnetic energy conversion system having a source of thermal energy and a magnetic field, a thermoelectromagnetic device positionable in the magnetic field in energy receiving relationship with the thermal energy source comprising: a junction of two dissimilar types of materials creating a contact potential across a region of electric field intensity extending along the junction and at least one pair of spaced apart electrical contacts in low resistance communication with the region of electric field intensity on at least one side of the junction, there being no low resistance path between the spaced apart contacts.
Claim 13
Dependent Claim
99 words
For use in a thermoelectromagnetic energy conversion system having a source of thermal energy and a magnetic field, a thermoelectromagnetic device positionable in the magnetic field in energy receiving relationship with the thermal energy source comprising: a junction of two dissimilar types of materials creating a contact potential across a region of electric field intensity extending along the junction and at least one pair of spaced apart electrical contacts in low resistance communication with the region of electric field intensity on at least one side of the junction, there being no low resistance path between the spaced apart contacts.
Claim 14
Dependent Claim
39 words
The invention as set forth in claim 9 above, wherein the p and n type materials are semiconductor materials having a concentration of mobile charge carriers between 1 X 107 and 1 X 1028 mobile carriers per cubic meter.
Claim 15
Dependent Claim
106 words
An electromagnetic energy conversion system comprising a source of energy; means for generating a magnetic Field, means defining a p-n semiconductor junction having a region of electric field intensity in proximity thereto, said region being in energy receiving relationship with the energy source and generating electron-hole pairs in response to the receipt of energy, said electrons and holes being accelerated to motion by the electric field within the region, the junction being positioned within the magnetic field with an orientation causing holes and electrons moving under the electric field to be accelerated in a longitudinal direction along the junction due to interaction with the magnetic field.
Claim 16
Dependent Claim
106 words
An electromagnetic energy conversion system comprising a source of energy; means for generating a magnetic Field, means defining a p-n semiconductor junction having a region of electric field intensity in proximity thereto, said region being in energy receiving relationship with the energy source and generating electron-hole pairs in response to the receipt of energy, said electrons and holes being accelerated to motion by the electric field within the region, the junction being positioned within the magnetic field with an orientation causing holes and electrons moving under the electric field to be accelerated in a longitudinal direction along the junction due to interaction with the magnetic field.
Claim 17
Dependent Claim
28 words
The invention as set forth in claim 11 above, further comprising means for integrating electric field intensities induced by longitudinally accelerated holes and electrons along the longitudinal direction.
Claim 18
Dependent Claim
124 words
A thermoelectromagnetic energy conversion system comprising: means for providing thermal energy to a thermoelectromagnetic energy converter; means for providing a field of magnetic flux density through a thermoelectromagnetic energy converter; and a thermoelectromagnetic energy converter positioned within the field of magnetic flux and in energy receiving relationship with the energy source, the energy converter including a p-n semiconductor junction parallel to the magnetic field having a depletion region on at least one side thereof and means for defining at least one central isolation region along a longitudinal dimension of the junction perpendicular to the magnetic field, the isolation region being in communication with the depletion region and permitting electrical communication between portions of the junction on opposite sides thereof only through the depletion region.
Claim 19
Dependent Claim
124 words
A thermoelectromagnetic energy conversion system comprising: means for providing thermal energy to a thermoelectromagnetic energy converter; means for providing a field of magnetic flux density through a thermoelectromagnetic energy converter; and a thermoelectromagnetic energy converter positioned within the field of magnetic flux and in energy receiving relationship with the energy source, the energy converter including a p-n semiconductor junction parallel to the magnetic field having a depletion region on at least one side thereof and means for defining at least one central isolation region along a longitudinal dimension of the junction perpendicular to the magnetic field, the isolation region being in communication with the depletion region and permitting electrical communication between portions of the junction on opposite sides thereof only through the depletion region.
Claim 20
Dependent Claim
123 words
A thermoelectromagnetic energy converter comprising: a p-n junction defined in a chip of semiconductor material, the junction having a depletion region extending thereacross and end regions spaced apart along a longitudinal dimension parallel to the junction; first and second dielectric regions disposed on opposite sides of the junction in communication with the depletion region, the dielectric regions being disposed between the spaced apart end regions and permitting electrical communication therebetween only through the depletion region; means for forming electrical contact to opposite sides of the junction in each of the spaced apart end regions; and means for generating a magnetic flux through at least a portion of the depletion region, the flux being parallel to the junction and perpendicular to the longitudinal dimension.
Claim 21
Dependent Claim
123 words
A thermoelectromagnetic energy converter comprising: a p-n junction defined in a chip of semiconductor material, the junction having a depletion region extending thereacross and end regions spaced apart along a longitudinal dimension parallel to the junction; first and second dielectric regions disposed on opposite sides of the junction in communication with the depletion region, the dielectric regions being disposed between the spaced apart end regions and permitting electrical communication therebetween only through the depletion region; means for forming electrical contact to opposite sides of the junction in each of the spaced apart end regions; and means for generating a magnetic flux through at least a portion of the depletion region, the flux being parallel to the junction and perpendicular to the longitudinal dimension.
Claim 22
Independent Claim
143 words
The method of generating an electrical potential between two points longitudinally spaced along one side of a longitudinally extending junction having a contact potential producing an electric field intensity within a region near the junction, said points having no path of low electrical resistance between them comprising the steps of: generating a magnetic flux at the junction between the longitudinally spaced points within the region within which the electric field intensity exists, said flux having at least a component thereof perpendicular to both the contact potential of the junction and the longitudinal direction; and generating electrical carriers within the region near the junction between the two longitudinally spaced points within which the electrical field intensity exists, said electrical carriers being driven under the influence of the electric field intensity and the magnetic flux to induce an electrical potential between the longitudinally spaced points.
Claim 23
Independent Claim
143 words
The method of generating an electrical potential between two points longitudinally spaced along one side of a longitudinally extending junction having a contact potential producing an electric field intensity within a region near the junction, said points having no path of low electrical resistance between them comprising the steps of: generating a magnetic flux at the junction between the longitudinally spaced points within the region within which the electric field intensity exists, said flux having at least a component thereof perpendicular to both the contact potential of the junction and the longitudinal direction; and generating electrical carriers within the region near the junction between the two longitudinally spaced points within which the electrical field intensity exists, said electrical carriers being driven under the influence of the electric field intensity and the magnetic flux to induce an electrical potential between the longitudinally spaced points.
Claim 24
Dependent Claim
50 words
The method of generating an electrical potential as set forth in claim 15 above, wherein the junction is a p-n semiconductor junction and wherein the step of generating electrical carriers includes the step of applying thermal energy to the region near the junction within which the electrical field intensity exists.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-04 | 1977-08-06 | 1978-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-04 | 1981-08-06 | 1982-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-04 | 1985-08-06 | 1986-02-05 | $7700.00 | Window Closed / Lapsed |