US3789369A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film mis storage diode
Assignee: United States Department of the Navy
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Filing: 1972-07-10
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Granted: 1974-01-29
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Expires: 1992-07-10
Abstract
Abstract The method of storing information in a MIS light sensitive diode whose photovoltaic response may be altered reproducibly and reversibly by irradiation with suitable wavelength electromagnetic radiation or the temporary application of an electric voltage.
Inventors
- 👤 D Lile
- 👤 D Collins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:46
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/04; G11C13/048; H; H10; H10F; H10F10/00; H10F10/10; H10F10/12; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F39/00; H10F39/10; H10F39/12; H10F39/18; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
128 words
A method of storing electro-optic information in a thin film polycrystalline MIS storage light sensitive diode containing a layer of insulating material in contact with a thin film polycrystalline semiconductor material comprising the following steps in the order named: a. cooling the diode to a temperature of approximately 80*K in the absence of radiation of energy greater than 1.5eV, b. irradiating said cooled diode with electromagnetic radiation of energy less than 1.5eV to produce a reference output voltage, c. applying to said cooled diode electromagnetic energy representing information to be stored, d. irradiating said cooled diode with electromagnetic radiation of energy less than 1.5eV, e. measuring the output voltage across said cooled diode to determine the change in photovoltage response which is a measure of the stored information.
Claim 2
Independent Claim
128 words
A method of storing electro-optic information in a thin film polycrystalline MIS storage light sensitive diode containing a layer of insulating material in contact with a thin film polycrystalline semiconductor material comprising the following steps in the order named: a. cooling the diode to a temperature of approximately 80*K in the absence of radiation of energy greater than 1.5eV, b. irradiating said cooled diode with electromagnetic radiation of energy less than 1.5eV to produce a reference output voltage, c. applying to said cooled diode electromagnetic energy representing information to be stored, d. irradiating said cooled diode with electromagnetic radiation of energy less than 1.5eV, e. measuring the output voltage across said cooled diode to determine the change in photovoltage response which is a measure of the stored information.
Claim 3
Dependent Claim
26 words
The method of claim 1 further comprising the step of heating said cooled diode to a temperature of approximately 300*K to erase said previously stored information.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein the semiconductor element of said diode is a polycrystalline thin film of InSb and said layer of insulating material is anodically formed In2O3.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said semiconductor element of said diode is polycrystalline thin film InAs.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said semiconductor element is a polycrystalline thin film of InSb1 xAsx.
Claim 7
Independent Claim
124 words
A method of storing electrical information in a mis storage diode being both light sensitive and electrically sensitive containing a layer of insulating material in contact with a semiconductor material, comprising; a. cooling said diode to a temperature of approximately 80*K, b. irradiating said cooled diode with electromagnetic radiation of energy above the fundamental edge of the semiconductor material and measuring the resulting output surface photovoltage of said cooled diode to determine an initial photovoltaic response of said diode, c. temporarily applying a voltage representing the information to be stored across said cooled diode, d. removing the applied voltage, e. measuring the output surface photovoltage of said cooled diode to determine the change in photovoltaic response which is a measure of the stored information.
Claim 8
Independent Claim
124 words
A method of storing electrical information in a mis storage diode being both light sensitive and electrically sensitive containing a layer of insulating material in contact with a semiconductor material, comprising; a. cooling said diode to a temperature of approximately 80*K, b. irradiating said cooled diode with electromagnetic radiation of energy above the fundamental edge of the semiconductor material and measuring the resulting output surface photovoltage of said cooled diode to determine an initial photovoltaic response of said diode, c. temporarily applying a voltage representing the information to be stored across said cooled diode, d. removing the applied voltage, e. measuring the output surface photovoltage of said cooled diode to determine the change in photovoltaic response which is a measure of the stored information.
Claim 9
Dependent Claim
39 words
The method of claim 6 further comprising the step of erasing said previously stored information by the temporary application of a voltage across said diode of opposite polarity and of equal or greater magnitude than said previously applied voltage.
Claim 10
Dependent Claim
29 words
The method of claim 6 wherein the semiconductor element of said diode is a polycrystalline thin film of InSb and said layer of insulating material is reactively evaporated SiOx.
Claim 11
Dependent Claim
19 words
The method of claim 6 wherein said semiconductor element of said diode is a polycrystalline thin film of InAs.
Claim 12
Dependent Claim
20 words
The method of claim 6 wherein said semiconductor element of said diode is a polycrystalline thin film of InSb1 xAsx.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-28 | 1977-07-30 | 1978-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-28 | 1981-07-30 | 1982-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-28 | 1985-07-30 | 1986-01-29 | $7700.00 | Window Closed / Lapsed |