Random-access memory device using sequential-access memories

Claim 2

A random-access memory device, comprising: a plurality of circulating main memories having a plurality of memory zones allocated sequentially; a plurality of circulating buffer memories arranged in parallel with respect to said main memories and each buffer memory having a memory capacity equal to 1/h of the memory capacity of each circulating main memory and each buffer memory circulating in the same clock timing as each circulating main memory, wherein ''''h'''' is an integer greater than two and the number of said buffer memories being equal to twice the number of all memory zones of each of said main memories, and said buffer memories being equally divided into two groups; means for generating zone selecting coded signals; means coupled to each circulating main memory, said circulating buffer memories, and the zone selecting coded signal generating means for successively reading out blocks of binary information stored in each main memory to selected ones of the buffer memories including means for alternately selecting one and the other of said two groups; means for selecting a desired one of said circulating main memories and corresponding ones of the memory zones therein in response to said zone selecting coded signals and selection means coupled to said circulating buffer memories for selecting the buffer memories to effect the reading out of the data stored therein in a desired order after the reading out from the circulating main memories.

Claim 3

A random-access memory device, comprising: at least one circulating main memory having a plurality of sequential memory zones; a plurality of circulating buffer memories all arranged in parallel with respect to said main memory and each having a memory capacity equal to 1/h of the memory capacity of the circulating main memory and each circulating in response to the same clock timing as the circulating main memory to effect the serial storing of information from one of the memory zones of the main memory, where ''''h'''' is an integer greater than two, the number of said buffer memories being equal to twice the number of all memory zones of said main memory, and said buffer memories being equally divided into two groups; means for generating zone selecting coded signals; group selection means operatively coupled to said circulating buffer memories for alternately selecting one or the other of said two groups; reading-out means operatively coupled to said circulating main memory, said circulating buffer memories, and the coded signal generating means for successively reading out blocks of binary information stored in the main memory to said selected ones of said groups of buffer memories including means for connecting corresponding ones of the memory zones to said sElected ones of said groups of buffer memories in response to said zone selecting coded signals; output terminal means; and switching means operatively coupled to the output of said circulating buffer memories and said output terminal means for selectively switching the output of each of said buffer memories to said output terminal means in a desired order after completion of the read-out from said circulating main memory.

Claim 4

A random-access memory device, comprising: at least one circulating main memory having a plurality of sequential memory zones; a plurality of circulating buffer memories all arranged in parallel with respect to said main memory and each having a memory capacity equal to 1/h of the memory capacity of the circulating main memory and each circulating in response to the same clock timing as the circulating main memory to effect the serial storing of information from one of the memory zones of the main memory, where ''''h'''' is an integer greater than two, the number of said buffer memories being equal to twice the number of all memory zones of said main memory, and said buffer memories being equally divided into two groups; means for generating zone selecting coded signals; group selection means operatively coupled to said circulating buffer memories for alternately selecting one or the other of said two groups; reading-out means operatively coupled to said circulating main memory, said circulating buffer memories, and the coded signal generating means for successively reading out blocks of binary information stored in the main memory to said selected ones of said groups of buffer memories including means for connecting corresponding ones of the memory zones to said sElected ones of said groups of buffer memories in response to said zone selecting coded signals; output terminal means; and switching means operatively coupled to the output of said circulating buffer memories and said output terminal means for selectively switching the output of each of said buffer memories to said output terminal means in a desired order after completion of the read-out from said circulating main memory.

Claim 5

A random-access memory device according to claim 2, in which a plurality of said circulating main memories are provided and said reading-out means includes means for selecting a desired one of the circulating main memories.