US3786441A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and device for storing information and providing an electric readout
Assignee: General Electric Co
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Filing: 1971-11-24
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Granted: 1974-01-15
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Expires: 1991-11-24
Abstract
Abstract An information storing method and a storing device using a conductor-insulator-semiconductor (CIS) structure as the storage element is disclosed within. The CIS structure is initially charged to a predetermined voltage, forming a depletion region within the semiconductor beneath the conductor. Minority carriers are controllably generated within the semiconductor in proportional response to an information-bearing signal such as a specific amount of electromagnetic radiation flux. The generated minority carriers move to and are stored at the surface of the semiconductor beneath the conductor due to the electric field existing in the depletion region, thus changing the predetermined voltage. The change in voltage which may be determined is a measure of the number of generated minority carriers and, therefore, is a measure of the integrated electromagnetic radiation flux and constitutes the stored information.
Inventors
- 👤 W Engeler
- 👤 M Garfinkel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:29
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/04; G11C13/048
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
87 words
A method of storing information in a conductor-insulatorsemiconductor capacitor and for providing an electrical readout comprising the steps of a. charging the capacitor to a predetermined voltage causing a depletion region to be formed in the semiconductor; b. removing the charging voltage source; c. controllably generating minority carriers within the semiconductor in proportional response to an information signal; and d. electrically measuring the change of voltage of the capacitor caused by the presence of the generated minority carriers which have moved to the surface of the semiconductor.
Claim 2
Independent Claim
87 words
A method of storing information in a conductor-insulatorsemiconductor capacitor and for providing an electrical readout comprising the steps of a. charging the capacitor to a predetermined voltage causing a depletion region to be formed in the semiconductor; b. removing the charging voltage source; c. controllably generating minority carriers within the semiconductor in proportional response to an information signal; and d. electrically measuring the change of voltage of the capacitor caused by the presence of the generated minority carriers which have moved to the surface of the semiconductor.
Claim 3
Dependent Claim
55 words
The method of claim 1 in which the step of controllably generating minority carriers is performed by irradiating the semiconductor portion of the conductor-insulator-semiconductor capacitor for a predetermined time interval with electromagnetic radiation having an energy at least as great as the semiconductor band gap and causing the generation of minority carriers within the semiconductor.
Claim 4
Independent Claim
102 words
A method of storing information in a semi-conductor structure comprising the steps of: charging a predetermined portion of one surface-adjacent region of said semiconductor structure to a predetermined voltage for causing a depletion region to be formed in the semiconductor structure; controllably generating minority carriers within said predetermined portion of said surface-adjacent region in response to an information signal; storing the minority carriers near the surface of said semiconductor structure in said depletion region; and sensing the change in voltage of said predetermined portion of the surface-adjacent region caused by the storage of minority carriers near the surface of said semiconductor structure.
Claim 5
Independent Claim
102 words
A method of storing information in a semi-conductor structure comprising the steps of: charging a predetermined portion of one surface-adjacent region of said semiconductor structure to a predetermined voltage for causing a depletion region to be formed in the semiconductor structure; controllably generating minority carriers within said predetermined portion of said surface-adjacent region in response to an information signal; storing the minority carriers near the surface of said semiconductor structure in said depletion region; and sensing the change in voltage of said predetermined portion of the surface-adjacent region caused by the storage of minority carriers near the surface of said semiconductor structure.
Claim 6
Dependent Claim
39 words
The method of claim 3 wherein the step of controllably generating minority carriers is performed by irradiating the semiconductor structure for a predetermined time interval with electromagnetic radiation having an energy at least as great as the semiconductor bandgap.
Claim 7
Dependent Claim
28 words
The method of claim 3 wherein a plurality of depletion regions are formed in predetermined portions of said surface-adjacent regions of said semiconductor structure for storing information signals.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-14 | 1977-07-16 | 1978-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-14 | 1981-07-16 | 1982-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-14 | 1985-07-16 | 1986-01-15 | $7700.00 | Window Closed / Lapsed |