US3786319A
Expired / Lapsed
US
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Insulated-gate field-effect transistor
Assignee: Panasonic Holdings Corp
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Filing: 1967-03-20
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Granted: 1974-01-15
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Expires: 1987-03-20
Abstract
Abstract A multi-polar insulated gate transistor having two or more isolated electrodes formed on an insulated film, and an island region having a conductivity type different from that of the semiconductor proper and located in the portion of the substrate beneath said film and below the gap between said electrodes, whereby a large current can flow through the element located closer to the drain when the respective elements which may consist of the pair, i.e., each gate and source-island, islandisland or island-drain are under identical voltage conditions.
Inventors
- 👤 O Tomisaburo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/611; H10D62/00; H10D62/10; H10D62/113; H10D62/124; H10D62/126; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
114 words
A p-channel insulated-gate field-effect transistor comprising an insulator film on a semiconductor substrate, a source and a drain electrode regions having opposite conductivity type to the main part of said substrate, at least two gate electrodes mutually independently located on said insulator film, and at least one island region having the same conductivity type as said source and said drain electrode regions and existing directly below each respective gap between said gates and on the underside of said insulating film, said gates being located correspondingly between said source region, drain region, and island region respectively, said insulator film successively decreasing in its thickness in the direction from said source electrode to said drain electrode.
Claim 2
Dependent Claim
114 words
A p-channel insulated-gate field-effect transistor comprising an insulator film on a semiconductor substrate, a source and a drain electrode regions having opposite conductivity type to the main part of said substrate, at least two gate electrodes mutually independently located on said insulator film, and at least one island region having the same conductivity type as said source and said drain electrode regions and existing directly below each respective gap between said gates and on the underside of said insulating film, said gates being located correspondingly between said source region, drain region, and island region respectively, said insulator film successively decreasing in its thickness in the direction from said source electrode to said drain electrode.
Claim 3
Dependent Claim
115 words
A compound channel insulated gate triode comprising first, second and third spaced diffused regions in a semiconductor substrate forming first, second and third terminals respectively, first enhancement mode channel between the first and second diffused regions and a second enhancement mode channel between the second and third diffused regions and electrically common gate electrodes overlying both channels and separated from the first and second channels by first and second insulating layers respectively, the first channel having a greater transconductance than the second channel at a given gate voltage, said greater transconductance being produced by the width to length ratio of the first channel being greater than the width to length ratio of the second channel.
Claim 4
Dependent Claim
115 words
A compound channel insulated gate triode comprising first, second and third spaced diffused regions in a semiconductor substrate forming first, second and third terminals respectively, first enhancement mode channel between the first and second diffused regions and a second enhancement mode channel between the second and third diffused regions and electrically common gate electrodes overlying both channels and separated from the first and second channels by first and second insulating layers respectively, the first channel having a greater transconductance than the second channel at a given gate voltage, said greater transconductance being produced by the width to length ratio of the first channel being greater than the width to length ratio of the second channel.
Claim 5
Dependent Claim
30 words
An insulated gate triode as defined in claim 2 wherein the width of the first channel is greater than the width of the second channel to produce the greater transconductance.
Claim 6
Dependent Claim
34 words
An insulated gate triode as defined in claim 2 wherein the length of the second channel is greater than the length of the first channel to produce the greater transconductance of the first channel.
Claim 7
Dependent Claim
134 words
A compound channel insulated gate triode comprising first and second enhancement mode channels formed on a common substrate, each channel having a drain and a source end and a control gate separated from the channel by an insulating layer, the first channel having a greater transconductance than the second channel at a given gate bias, said greater transconductance being produced by the width to length ratio of the first channel being greater than the width to length ratio of the second channel, the drain of the first channel being the drain of the triode, the source of the first channel being electrically common with the drain of the second channel, the source of the second channel being the source of the triode, and the control gates of the first and second channels being common.
Claim 8
Dependent Claim
134 words
A compound channel insulated gate triode comprising first and second enhancement mode channels formed on a common substrate, each channel having a drain and a source end and a control gate separated from the channel by an insulating layer, the first channel having a greater transconductance than the second channel at a given gate bias, said greater transconductance being produced by the width to length ratio of the first channel being greater than the width to length ratio of the second channel, the drain of the first channel being the drain of the triode, the source of the first channel being electrically common with the drain of the second channel, the source of the second channel being the source of the triode, and the control gates of the first and second channels being common.
Claim 9
Dependent Claim
30 words
An insulated gate triode as defined in claim 5 wherein the width of the first channel is greater than the width of the second channel to produce the greater transconductance.
Claim 10
Dependent Claim
34 words
An insulated gate triode as defined in claim 5 wherein the length of the second channel is greater than the length of the first channel to produce the greater transconductance of the first channel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-14 | 1977-07-16 | 1978-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-14 | 1981-07-16 | 1982-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-14 | 1985-07-16 | 1986-01-15 | $7700.00 | Window Closed / Lapsed |