US3785885A
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Epitaxial solution growth of ternary iii-v compounds
Assignee: Texas Instruments Inc
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Filing: 1970-03-24
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Granted: 1974-01-15
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Expires: 1990-03-24
Abstract
Abstract The epitaxial solution growth of ternary III-V compounds, including gallium aluminum arsenide, for example, is controlled to accomplish uniform composition over extended growth periods. In a system comprising (1) a binary III-V compound substrate, (2) a solution of the ternary compound in the Group III element of the substrate, saturated with respect to the substrate compound, and (3) a solid source of the ternary compound in contact with the solution a short distance from the substrate, the necessary control is achieved by maintaining the substrate at least about 5* cooler than the solid source material spaced therefrom.
Inventors
- 👤 L Stone
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:33
CPC Classifications
C; C30; C30B; C30B9/00; C30B9/04; C30B9/06; C30B19/00; C30B19/06
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
32 words
A method as defined by claim 1 wherein said ternary compound is GaxAll xAs, said substrate is GaAs, and said solution consists essentially of gallium, aluminum and arsenic plus a suitable dopant.
Claim 2
Dependent Claim
35 words
A method as defined by claim 1 wherein the temperature of the system is gradually raised during epitaxial growth, at a rate of about 0.01* C. to 1.0* C. per minute, while maintaining said gradient.
Claim 3
Independent Claim
100 words
A method for the epitaxial solution growth of a ternary III-V compound comprising the steps of: a. immersing a monocrystalline binary III-V compound substrate below the surface of a saturated solution of said binary compound in the Group III element thereof, said solution containing a minor amount of said ternary compound dissolved therein; while floating on the surface of said solution a source of said binary and ternary compounds in the form of discrete, undissolved crystallites spaced about 1 mm. to 5 cm. from said substrate; and b. maintaining said substrate about 5* to 10* C. cooler than said source.
Claim 4
Dependent Claim
38 words
A method as defined by claim 4 wherein the temperature of the system is gradually raised during epitaxial growth, at a rate of about 0.01* C. to 1.0* per minute, while maintaining the substrate cooler than the source.
Claim 5
Dependent Claim
32 words
A method as defined by claim 4 wherein said ternary compound is GaxAl1 xAs, said substrate is GaAs, and said solution consists essentially of gallium, aluminum and arsenic, plus a suitable dopant.
Claim 6
Dependent Claim
31 words
A method as defined by claim 4 wherein said ternary compound is selected from the group consisting of GaxAl1 xAs, InAsxP1 x, GaAsxp1 x, GaxIn1 xAs, GaAsxSb1 x, and AlAsxP1 x.
Claim 7
Dependent Claim
33 words
A method as defined in claim 4 wherein the temperature of the system is lowered slightly after each a plurality of prolonged time periods of growth during which no change in temperature occurs.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-14 | 1977-07-16 | 1978-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-14 | 1981-07-16 | 1982-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-14 | 1985-07-16 | 1986-01-15 | $7700.00 | Window Closed / Lapsed |