US3784877A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Rf power transistor secondary breakdown protection circuit
Assignee: MDT Corp
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Filing: 1972-06-05
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Granted: 1974-01-08
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Expires: 1992-06-05
Abstract
Abstract A protection circuit for RF power transistors to prevent secondary breakdown includes gate means to monitor both the collector current and collector voltage. A gate pulse generated each time the collector voltage exceeds a preset value is used to gate a wave form derived from the transistor collector current. When the current wave form is in phase with the gate pulse and is of sufficient amplitude, the gate means provides a controlled voltage to bias off the transistor power supply for purposes of reducing the output power to safe operating levels.
Inventors
- 👤 D Cowell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:19
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0826; H03F; H03F1/00; H03F1/52; H03F2200/00; H03F2200/462; H03F2200/471; H03F2200/486; H03K2217/00; H03K2217/0036
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
132 words
In an RF generator including a RF power output transistor, a protection circuit for preventing secondary breakdown of said transistor conprising a. means for producing a gate pulse in phase with the collector voltage of said power transistor each time the collector voltage of said power transistor exceeds a preselected value; b. gate means receiving said gate pulse and a signal representing the collector current of said power transistor for producing an output signal only when said gate pulse and collector current are in phase and said collector current exceeds a preselected value; and c. means applying said output signal to said RF generator for reducing the output power thereof to a level within the safe operating limits of said transistor, whereby said transistor continues operation at a reduced level of power.
Claim 2
Dependent Claim
132 words
In an RF generator including a RF power output transistor, a protection circuit for preventing secondary breakdown of said transistor conprising a. means for producing a gate pulse in phase with the collector voltage of said power transistor each time the collector voltage of said power transistor exceeds a preselected value; b. gate means receiving said gate pulse and a signal representing the collector current of said power transistor for producing an output signal only when said gate pulse and collector current are in phase and said collector current exceeds a preselected value; and c. means applying said output signal to said RF generator for reducing the output power thereof to a level within the safe operating limits of said transistor, whereby said transistor continues operation at a reduced level of power.
Claim 3
Dependent Claim
22 words
A protection circuit as set forth in claim 1, wherein said signal representing said power transistor collector current is a voltage signal.
Claim 4
Dependent Claim
27 words
A protection circuit as set forth in claim 2 including a torus operatively connected to the collector circuit of said power transistor for generating said voltage signal.
Claim 5
Dependent Claim
29 words
A protection circuit as set forth in claim 2 including a DC restorer for making said voltage signal positive going prior to feeding the same to said gate means.
Claim 6
Dependent Claim
33 words
A protection circuit as set forth in claim 1 wherein said output signal is pulsating AC, and said last mentioned means includes a rectifier for converting said pulsating AC output signal to DC.
Claim 7
Dependent Claim
19 words
A protection circuit as set forth in claim 1, wherein saId RF generator operates as a Class C amplifier.
Claim 8
Dependent Claim
167 words
A protection circuit for use in an electrosurgical unit to prevent secondary breakdown during periods of reactive loading of a RF power output transistor used in said unit, said power output transistor having its base connected to the RF generator of the electrosurgical unit, said protection circuit comprising: a. collector current monitoring means for producing a current signal representative of the collector current of said power transistor; b. collector voltage monitoring means for producing a gate pulse in phase with the collector voltage when the collector voltage of said power transistor exceeds a preselected value; c. a transmission gate receiving said gate pulse and current signal and producing a correction signal only when said gate pulse and current signal are in phase and said current signal exceeds a preselected value; and d. means for applying said correction signal to said RF generator to bias off the drive thereof and reduce the power supplied to said power output transistor to within the safe operating limits of said transistor.
Claim 9
Dependent Claim
167 words
A protection circuit for use in an electrosurgical unit to prevent secondary breakdown during periods of reactive loading of a RF power output transistor used in said unit, said power output transistor having its base connected to the RF generator of the electrosurgical unit, said protection circuit comprising: a. collector current monitoring means for producing a current signal representative of the collector current of said power transistor; b. collector voltage monitoring means for producing a gate pulse in phase with the collector voltage when the collector voltage of said power transistor exceeds a preselected value; c. a transmission gate receiving said gate pulse and current signal and producing a correction signal only when said gate pulse and current signal are in phase and said current signal exceeds a preselected value; and d. means for applying said correction signal to said RF generator to bias off the drive thereof and reduce the power supplied to said power output transistor to within the safe operating limits of said transistor.
Claim 10
Dependent Claim
28 words
A protection circuit as set forth in claim 7 wherein said collector current monitoring means is a torus which produces a voltage signal representative of said collector current.
Claim 11
Dependent Claim
30 words
A protection circuit as set forth in claim 8 including a DC restorer for making said voltage signal positive going prior to feeding said voltage signal to said transmission gate.
Claim 12
Dependent Claim
48 words
A protection circuit as set forth in claim 7 wherein said correction signal is pulsating AC and said last mentioned means includes a rectifier for converting said pulsating AC to a DC control signal, said DC control signal being applied to the power supply of said RF generator.
References Cited (Backward Citations)
US3356930A
Cited
US3507096A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-07 | 1977-07-09 | 1978-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-07 | 1981-07-09 | 1982-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-07 | 1985-07-09 | 1986-01-08 | $7700.00 | Window Closed / Lapsed |