US3783500A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1971-04-23
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Granted: 1974-01-08
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Expires: 1991-04-23
Abstract
Abstract A method of producing a semiconductor device in which a first insulating film of silicon dioxide is provided on surface of a semiconductor substrate, at least one passive circuit element is formed on said first insulating film, and a second silicon dioxide layer containing uniformly a small amount of phosphorus is deposited from the vapor phase on said first insulating film and passive element, thereby realizing stable passivation of the electrical characteristics of said semiconductor device. The water-proof property and accurate etching of said films are also accomplished.
Inventors
- 👤 T Tokuyama
- 👤 T Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:00
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10P; H10P95/00; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
127 words
A method of producing a semiconductor device comprising the steps of (a) forming a silicon dioxide layer on a semiconductor substrate having a plurality of active and passive circuit elements such as transistors, diodes, resistors, and capacitors in the surface portion thereof, (b) forming thin passive circuit elements such as resistors and capacitors on the silicon dioxide layer, (c) depositing electrode metal for connecting the circuit elements on the substrate so as to form a desired integrated circuit, and (d) forming another silicon dioxide layer including phosphorus on the semiconductor substrate by exposing the substrate to a gas mixture of silane, oxygen, phosphine and a carrier gas at temperatures of from about 250* to 550*C, wherein the volume ratio of silane and phosphine is at least 50.
Claim 2
Dependent Claim
46 words
A method of producing a semiconductor device according to claim 2, which further comprises the step of heating the semiconductor substrate after the step of forming said another silicon dioxide layer to a temperature higher than that at which said another silicon dioxide layer was formed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-07 | 1977-07-09 | 1978-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-07 | 1981-07-09 | 1982-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-07 | 1985-07-09 | 1986-01-08 | $7700.00 | Window Closed / Lapsed |