US3783119A
Expired / Lapsed
US
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Method for passivating semiconductor material and field effect transistor formed thereby
Assignee: International Business Machines Corp
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Filing: 1969-06-18
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Granted: 1974-01-01
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Expires: 1989-06-18
Abstract
Abstract A GETTERING LAYER OF PHOSPHORUS PENTOXIDE (P2O) OR LEAD OXIDE (PBO) ID DEPOSITED ON A THERMALLY GROWN OR PYROLYTICALLY DEPOSITED LAYER OF SILICON DIOXIDE TO FORM A GASS TO GETTER THE SODIUM IONS FROM THE SILICON DIOXIDE LAYER. !HE GETTERING AGENT IS THEN REMOVED BY SPUTTER ETCHING AND PROTECTIVE MATERIAL SUCH AS SILICON NITRIDE FOR EXAMPLE, IS THEN DEPOSITED ON THE SILICON DIOXIDE BY SPUTTERING IN A MANNER TO AVOID ANY CONTAMINATION OF THE SILICON DIOXIDE AFTER THE GETTERING AGENT HAS BEEN REMOVED
Inventors
- 👤 L Gregor
- 👤 L Maissel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P36/00; H10P95/00; H10W; H10W72/00; H10W72/90; H10W74/00; H10W74/40; H10W74/43; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/694; H10P14/6943; H10P14/69433; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/981; H10W72/983; Y; Y10; Y10S; Y10S257/00; Y10S257/928
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-31 | 1977-07-02 | 1978-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-31 | 1981-07-02 | 1982-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-31 | 1985-07-02 | 1986-01-01 | $7700.00 | Window Closed / Lapsed |