Method of manufacturing a semiconductor device and semiconductor device manufactured by using such a method
Abstract
Abstract A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE. BY USING A DOUBLE LAYER AS A MASKING LAYER, THE ELECTRIC PROPERIES OF TWO REGIONS WHICH ARE SITUATED IN THE SEMICONDUCTOR BODY ACCURATELY RELATIVE TO EACH OTHER CAN BE VARIED WITHOUT AN INTERIM PROCESION PHOTOMASKING STEP. THE INVENTION PROVIDES VWERY WIDE POSSIBILITIES OF APPLICATION. FOR EXAMPLE, THE FIRST REGION CAN BE DOPED WITH AN IMPURITY VIA AN APERATUS IN THE MASKING LAYER, AFTER WHICH THE LOWER COMPONENT LAYER OF THE MASKING LAYER IS UNDERETCHED AND AN IMPURITY IS THEN INTRODUCED INTO THE SECOND REGION. IT IS ALSO POSSIBLE, AFTER UNDERTCHING THE LOWER COMPONENT LAYER, TO OXIDISE THE SECOND REGION OF THE SEMICONDUCTOR BODY, AS A RESULT OF WHICH MAY IMPORTANT STRUCTURES ARE OBTAINED IN A SIMPLE MANNER.
Inventors
- 👤 M Paffen
- 👤 J Appels
- 👤 W Verkuijlen
- 👤 E Kooi
Bibliographic Details
Claims Analysis
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