US3781613A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Rf transistor carrier
Assignee: Collins Radio Co
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Filing: 1972-10-10
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Granted: 1973-12-25
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Expires: 1992-10-10
Abstract
Abstract An RF bipolar transistor and carrier which reduces inductance of the common lead of the transistor thereby increasing operational bandwidth and transistor gain especially in VHF-UHF applications. The carrier includes bonding pads for receiving the transistor and a low ohmage resistor and whereby wire bonds connected to the emitter and base regions of the transistor may be interlaced.
Inventors
- 👤 E Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:54
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W72/00; H10W72/90; H10W44/226; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/541; H10W72/547; H10W72/5475; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
158 words
A carrier for an RF transistor and a resistor comprising a substrate having opposed major surfaces, conductive metalization on first and second portions of said first major surface, conductive metalization on said second major surface integrally contiguous with said conductive metalization on said first portion, a rail member insulatively mounted on one end of said first portion whereby a resistor member may be mounted on said first portion in juxtaposition with said rail member, said rail member having conductive metalization on a surface spaced from said first portion, and a pair of post members having conductive metalization on surfaces thereof, said post members mounted on said second portion in spaced alignment whereby a transistor may be mounted therebetween on said second portion with said conductive metalization of said second portion in conductive union with said conductive metalization of said post members, said carrier allowing interlacing of wire bonds from said transistor to said rail member and said resistor.
Claim 2
Dependent Claim
158 words
A carrier for an RF transistor and a resistor comprising a substrate having opposed major surfaces, conductive metalization on first and second portions of said first major surface, conductive metalization on said second major surface integrally contiguous with said conductive metalization on said first portion, a rail member insulatively mounted on one end of said first portion whereby a resistor member may be mounted on said first portion in juxtaposition with said rail member, said rail member having conductive metalization on a surface spaced from said first portion, and a pair of post members having conductive metalization on surfaces thereof, said post members mounted on said second portion in spaced alignment whereby a transistor may be mounted therebetween on said second portion with said conductive metalization of said second portion in conductive union with said conductive metalization of said post members, said carrier allowing interlacing of wire bonds from said transistor to said rail member and said resistor.
Claim 3
Dependent Claim
12 words
A carrier as defined by claim 1 wherein said substrate is ceramic.
Claim 4
Dependent Claim
27 words
A carrier as defined in claim 1 wherein said surface of said rail member having conductive metalization includes two raised end portions with a central recessed portion.
Claim 5
Dependent Claim
244 words
An RF bipolar transistor and carrier comprising a semiconductor wafer having a collector region contiguous with one major surface and base and emitter regions contiguous with an opposite major surface; a carrier including a substrate having opposed major surfaces, conductive metalization on first and second portions of said first major surface, conductive metalization on said second major surface integrally contiguous with such conductive metalization on said first portion, a rail member insulatively mounted on one end of said first portion, said rail member having conductive metalization on a surface spaced from said first portion, and a pair of post members having conductive metalization on surfaces thereof, said post members mounted on said second portion in spaced alignment with said conductive metalization of said second portion in conductive union with said conductive metalization of said post members; a low ohmage, high current capacity resistor; said transistor being mounted to said second portion of said substrate between said pair of post members with said collector in conductive union with said conductive metalization of said second portion; said resistor being mounted on said first portion of said substrate in juxtaposition with said rail member and in conductive union with said conductive metalization of said first portion; first interconnect means connecting said conductive metalization of said rail member to one of said base and emitter regions of said transistor; and second interconnect means connecting said resistor to the other of said base and emitter regions on said transistor.
Claim 6
Dependent Claim
244 words
An RF bipolar transistor and carrier comprising a semiconductor wafer having a collector region contiguous with one major surface and base and emitter regions contiguous with an opposite major surface; a carrier including a substrate having opposed major surfaces, conductive metalization on first and second portions of said first major surface, conductive metalization on said second major surface integrally contiguous with such conductive metalization on said first portion, a rail member insulatively mounted on one end of said first portion, said rail member having conductive metalization on a surface spaced from said first portion, and a pair of post members having conductive metalization on surfaces thereof, said post members mounted on said second portion in spaced alignment with said conductive metalization of said second portion in conductive union with said conductive metalization of said post members; a low ohmage, high current capacity resistor; said transistor being mounted to said second portion of said substrate between said pair of post members with said collector in conductive union with said conductive metalization of said second portion; said resistor being mounted on said first portion of said substrate in juxtaposition with said rail member and in conductive union with said conductive metalization of said first portion; first interconnect means connecting said conductive metalization of said rail member to one of said base and emitter regions of said transistor; and second interconnect means connecting said resistor to the other of said base and emitter regions on said transistor.
Claim 7
Dependent Claim
27 words
An RF bipolar transistor and carrier as defined by claim 4 wherein said first and second interconnect means comprise first and second pluralities of interlaced wire bonds.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-24 | 1977-06-25 | 1977-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-24 | 1981-06-25 | 1981-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-24 | 1985-06-25 | 1985-12-25 | $7700.00 | Window Closed / Lapsed |