US3781612A
Expired / Lapsed
US
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Method of improving high-purity germanium radiation detectors
Assignee: United States Atomic Energy Commission
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Filing: 1972-03-28
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Granted: 1973-12-25
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Expires: 1992-03-28
Abstract
Abstract Method for improving the response characteristics of high-purity germanium radiation detectors by irradiation, annealing and etching the detectors.
Inventors
- 👤 J Llacer
- 👤 H Kraner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:44
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/292; H10F30/2925; H10F99/00; H10F71/00; H10F71/128; H10F71/134; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
15 words
The method of claim 1 in which said annealing is at 250*C for one hour.
Claim 2
Dependent Claim
20 words
The method of claim 1 in which said irradiation is with fast neutrons having an integrated dose of 1010 n/cm2.
Claim 3
Dependent Claim
80 words
Method for processing a high purity impurity doped germanium radiation detector, comprising the steps of: a. irradiating said detector with an integrated dosage of neutrons above the threshold for degradation of the resolution characteristics of said detector; and b. annealing said irradiated detector at a high enough temperature for a sufficient length of time for effecting the recovery of said degradation to a point at least where said recovered resolution equals the initial resolution of said detector before said irradiation.
Claim 4
Dependent Claim
20 words
The method of claim 4 in which said annealing step is followed by etching of the surface of said detector.
Claim 5
Dependent Claim
30 words
The method of claim 5 in which said irradiation is with fast neutrons having an integrated dosage of 1010 n/cm2, and said Annealing is at 250*C for about 1 hour.
Claim 6
Dependent Claim
127 words
High purity bulk germanium gamma radiation detector having deep level chemical impurities, comprising metal atoms selected from the group consisting of Li, Cu, Mn, Au, Co and Ni, where the net amount of said deep level chemical impurities is less than 5 X 1010 atoms/cc but wherein said deep level chemical impurities can act electrically as acceptors that behave as deep ionized acceptor traps, comprising: a. bulk germanium having radiation damage defects capable of changing the electrical properties of said acceptors; and b. acceptors whose electrical properties have been changed by shifts in at least some of said radiation damage defects; said radiation damage defects and shifts thereof in said bulk germanium being sequentially produced by neutron irradiation and by annealing respectively at incrementally increasing temperature steps.
Claim 7
Dependent Claim
20 words
The detector of claim 7 having a germanium bulk material formed with parallel planar ends in an annular grooved geometry.
Claim 8
Dependent Claim
21 words
The detector of claim 7 having a germanium bulk material forming respective cylindrical co-axial inner and outer p and n regions.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-24 | 1977-06-25 | 1977-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-24 | 1981-06-25 | 1981-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-24 | 1985-06-25 | 1985-12-25 | $7700.00 | Window Closed / Lapsed |