US3781610A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film circuits and method for manufacture
Assignee: Individual
•
Filing: 1972-05-22
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Granted: 1973-12-25
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Expires: 1992-05-22
Abstract
Abstract A thin film capacitor and resistor circuit is disclosed, each capacitor being formed by a structure including a metallic film on an insulating substrate, the metallic film having an oxidized surface formed by anodizing, an oxide layer on the oxidized surface of the metallic film, and a pair of spaced-apart conductor layers over the oxide layer, each resistor being formed by a resistive film on the substrate and a pair of spaced-apart conductor layers connecting with the ends of the resistive film. In the manufacture of the circuit, a predeposited substrate is produced that may be utilized by circuit designers in the subsequent fabrication of custom microcircuits. A heat treating technique is employed in trimming the resistors of the circuit.
Inventors
- 👤 G Bodway
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:28
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
34 words
A predeposited structure as in cLaim 1 wherein said metallic film elements are tantalum film elements having tantalum pentoxide upper surfaces, and wherein said layer of resistive material is a layer of tantalum nitride.
Claim 2
Dependent Claim
34 words
A predeposited structure as in claim 1 wherein said metallic film elements are hafnium film elements having hafnium oxide upper surfaces, and wherein said layer of resistive material is a layer of tantalum nitride.
Claim 3
Dependent Claim
330 words
An integrated circuit structure including interconnected thin film capacitor elements and resistor elements, said integrated circuit structure comprising: a substrate of insulating material; each of the capacitor elements of said integrated circuit structure being formed on one surface of said substrate and including a metallic film element on said one surface of said substrate, said metallic film element having an oxidized upper surface, a portion of an oxide layer on said oxidized upper surface of said metallic film element, and a pair of spaced-apart upper plate elements on said portion of said oxide layer over said metallic film element to define a pair of connections for the capacitor element, each of said upper plate elements comprising a portion of a layer of resistive material on said portion of said oxide layer over said metallic film element, a portion of a first layer of conductive material over said portion of said layer of resistive material, and a portion of a second layer of conductive material over said portion of said first layer of conductive material; each of the resistor elements of said integrated circuit structure being formed on said one surface of said substrate and including a portion of said oxide layer on said substrate, a portion of said layer of resistive material on said last-mentioned portion of said oxide layer, and a pair of spaced-apart upper terminal elements on said last-mentioned portion of said layer of resistive material to define a pair of connections for the resistor element, each of said upper terminal elements comprising a portion of said first layer of conductive material over said last-mentioned portion of said layer of resistive material, and a portion of said second layer of conductive material over said last-mentioned portion of said first layer of conductive material; and said second layer of conductive material being extended in selected patterns over said integrated circuit structure to interconnect selected ones of said connections for the capacitor and resistor elements of said integrated circuit structure.
Claim 4
Dependent Claim
121 words
A thin film structure including at least one capacitor and one resistor, said structure comprising: a substrate of insulating material; at least one conductive metallic film element on said substrate, said conductive metallic film element having an oxidized upper surface; an oxide layer extending entirely over said substrate and the oxidized upper surface of said conductive metallic film element; a pair of spaced-apart conductive plate elements on said oxide layer over the oxidized upper surface of said metallic film element to form a pair of connections for said capacitor; at least one resistive film element on said oxide layer; and a pair of spaced-apart conductive terminal elements on said resistive film element to form a pair of connections for said resistor.
Claim 5
Dependent Claim
20 words
A thin film structure as in claim 5 wherein said conductive metallic film element has its entire upper surface oxidized.
Claim 6
Dependent Claim
45 words
A thin film structure as in claim 6 wherein: said conductive metallic film element is a tantalum film element having a tantalum pentoxide upper surface; said oxide layer is a silicon oxide layer; and said layer of resistive material is a layer of tantalum nitride.
Claim 7
Dependent Claim
44 words
A thin film structure as in claim 6 wherein: said metallic film element is a hafnium film element having a hafnium oxide upper surface; said oxide layer is a silicon oxide layer; and said layer of resistive material is a layer of tantalum nitride.
Claim 8
Dependent Claim
96 words
A predeposited struCture from which thin film capacitors and resistors may be formed and interconnected, said predeposited structure comprising: a substrate of insulating material; a plurality of spaced metallic film elements formed on said substrate, each of said metallic film elements having an oxidized upper surface; an oxide layer formed on and extending entirely over said substrate and the oxidized upper surfaces of said metallic film elements; a layer of resistive material formed on and extending over said oxide layer; and a layer of conductive material formed on and extending over said layer of resistive material.
Claim 9
Dependent Claim
45 words
A predeposited structure as in claim 9 wherein: each of said metallic film elements has its entire upper surface oxidized; said layer of resistive material extends entirely over said oxide layer; and said layer of conductive material extends entirely over said layer of resistive material.
Claim 10
Dependent Claim
45 words
A predeposited structure as in claim 10 wherein: each of said metallic film elements in a tantalum film element having a tantalum pentoxide upper surface; said oxide layer is a silicon oxide layer; and said layer of resistive material is a layer of tantalum nitride.
Claim 11
Dependent Claim
19 words
A predeposited structure as in claim 11 wherein: said layer of conductive material is a layer of chrome gold.
Claim 12
Dependent Claim
45 words
A predeposited structure as in claim 10 wherein: each of said metallic film elements is a hafnium film element having a hafnium oxide upper surface; said oxide layer is a silicon oxide layer; and said layer of resistive material is a layer of tantalum nitride.
Claim 13
Dependent Claim
19 words
A predeposited structure as in claim 13 wherein said layer of conductive material is a layer of chrome gold.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-24 | 1977-06-25 | 1977-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-24 | 1981-06-25 | 1981-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-24 | 1985-06-25 | 1985-12-25 | $7700.00 | Window Closed / Lapsed |