Schottky barrier diode read-only memory

Claim 1

A monolithic structure circuit array comprising: a. a semiconductor substrate, b. more than one separate and distinctly functional integrated circuit means located on said semiconductor substrate, c. a first one of said more than one separate and distinctly functional integrated circuit means comprising a plurality of Schottky barrier diodes located on said semiconductor substrate, d. each of said plurality of Schottky barrier diodes comprising a more than one metal system contacting said semiconductor substrate for forming Schottky barrier diode junctions, e. an interconnection metallurgy disposed on said substrate, at least a portion of said interconnection metallurgy adapted for interconnecting said plurality of Schottky barrier diodes, f. said interconnection metallurgy comprising a metallurgical system comprising said more than one metal system, g. said more than one metal system contacting said semiconductor substrates for forming Schottky barrier diode junctions and said interconnection metallurgy constituting a continuous electrical path, h. said plurality of Schottky barrier diodes constituting a read-only memory, i. each of said other more than one separate and distinctly functional integrated circuit means each comprising at least a single Schottky barrier diode, j. each of said at least one single Schottky barrier diode comprising a more than one metal system contacting said semiconductor substrate for forming a Schottky barrier diode junction, and k. at least another portion of said interconnection metallurgy being adapted for connecting said other more than one separate and distinctly functional integrated circuit means to said read-only memory.