US3777229A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thyristor with auxiliary emitter which triggers first
Assignee: Siemens AG
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Filing: 1972-08-01
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Granted: 1973-12-04
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Expires: 1992-08-01
Abstract
Abstract A thyristor having an auxiliary emitter located between the main emitter and the trigger or gate electrode, the auxiliary emitter being broader in its cross-sectional radial width than about 1 mm so that destructive breakdown of the main thyristor is prevented.
Inventors
- 👤 J Burtscher
- 👤 P Voss
- 👤 K Frohmader
- 👤 A Porst
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:01
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/221; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/148
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
A thyristor comprising a semiconductor member with at least four zones of alternate conductivity type; a first zone being a main emitter and an auxiliary emitter laterally spaced from each other, and a second zone being a base; sAid main emitter having an electrode thereon and said base having a gating electrode thereon; said auxiliary emitter being positioned between said main emitter and said gating electrode and electrically connected with said base; said auxiliary emitter having a width greater than 1 mm and said electrode of said main emitter being electrically connected with said base at least one place remote from said auxiliary emitter.
Claim 2
Dependent Claim
104 words
A thyristor comprising a semiconductor member with at least four zones of alternate conductivity type; a first zone being a main emitter and an auxiliary emitter laterally spaced from each other, and a second zone being a base; sAid main emitter having an electrode thereon and said base having a gating electrode thereon; said auxiliary emitter being positioned between said main emitter and said gating electrode and electrically connected with said base; said auxiliary emitter having a width greater than 1 mm and said electrode of said main emitter being electrically connected with said base at least one place remote from said auxiliary emitter.
Claim 3
Dependent Claim
22 words
A thyristor according to claim 1 in which said auxiliary emitter has a width in the range of 2 and 10 mm.
Claim 4
Dependent Claim
39 words
A thyristor according to claim 1 in which said auxiliary and main emitter are dimensioned with respect to each other so that when the forward breakover voltage is exceeded in the forward direction, the auxiliary thyristor will gate first.
Claim 5
Dependent Claim
131 words
A thyristor comprising a semiconductor member with at least four zones of alternate conductivity type; a first zone being a main emitter and an auxiliary emitter laterally spaced from each other, and a second zone being a base; said main emitter having an electrode thereon and said base having a gating electrode thereon; said auxiliary emitter being positioned between said main emitter and said gating electrode and electrically connected with said base; said main emitter and said auxiliary emitter having a width dimension with respect to each other so that when the breakover voltage of the thyristor is exceeded in the forward direction, the auxiliary emitter will gate first; and said electrode of said main emitter being electrically connected with said base at least one place remote from said auxiliary emitter.
Claim 6
Dependent Claim
131 words
A thyristor comprising a semiconductor member with at least four zones of alternate conductivity type; a first zone being a main emitter and an auxiliary emitter laterally spaced from each other, and a second zone being a base; said main emitter having an electrode thereon and said base having a gating electrode thereon; said auxiliary emitter being positioned between said main emitter and said gating electrode and electrically connected with said base; said main emitter and said auxiliary emitter having a width dimension with respect to each other so that when the breakover voltage of the thyristor is exceeded in the forward direction, the auxiliary emitter will gate first; and said electrode of said main emitter being electrically connected with said base at least one place remote from said auxiliary emitter.
Claim 7
Dependent Claim
84 words
A thyristor comprising a semiconductor member having at least three zones with adjacent zones of opposite conductivity type, a gate electrode attached to one of said zones, a main emitter attached to said one of said zones remotely from said gate electrode, and an auxiliary emitter attached to said one of said zones between said gate electrode and said main emitter and said auxiliary emitter having a greater dimension than said main emitter in the direction between said gate electrode and said main emitter.
Claim 8
Dependent Claim
84 words
A thyristor comprising a semiconductor member having at least three zones with adjacent zones of opposite conductivity type, a gate electrode attached to one of said zones, a main emitter attached to said one of said zones remotely from said gate electrode, and an auxiliary emitter attached to said one of said zones between said gate electrode and said main emitter and said auxiliary emitter having a greater dimension than said main emitter in the direction between said gate electrode and said main emitter.
Claim 9
Dependent Claim
87 words
A thyristor comprising a semiconductor member having a plurality of zones with adjacent zones being of opposite conductivity type, a gate electrode attached to one of said zones, a main emitter attached to said one of said zones remotely from said gate electrode and an auxiliary emitter attached to said one of said zones between said gate electrode and said main emitter, the voltage difference across said auxiliary emitter being greater than that across said main emitter when a forward voltage is applied to said main electrodes.
Claim 10
Dependent Claim
87 words
A thyristor comprising a semiconductor member having a plurality of zones with adjacent zones being of opposite conductivity type, a gate electrode attached to one of said zones, a main emitter attached to said one of said zones remotely from said gate electrode and an auxiliary emitter attached to said one of said zones between said gate electrode and said main emitter, the voltage difference across said auxiliary emitter being greater than that across said main emitter when a forward voltage is applied to said main electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-03 | 1977-06-04 | 1977-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-03 | 1981-06-04 | 1981-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-03 | 1985-06-04 | 1985-12-04 | $7700.00 | Window Closed / Lapsed |