US3771027A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bistable semiconductor device
Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1971-11-01
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Granted: 1973-11-06
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Expires: 1991-11-01
Abstract
Abstract The present bistable semiconductor device has at least three junctions. At least one of the outer junctions is interrupted by short circuit means hereafter referred to as shorting areas on simply shortings which extend, preferably as narrow strips, through the semiconductor zone located adjacent to main electrode means of the device, whereby the shorting areas extend substantially in parallel to the direction of propagation of the conductive state which starts at and extends from a gate electrode in response to a control pulse applied to said gate electrode.
Inventors
- 👤 A Marek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:33
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/70; H10W40/73; H10D; H10D99/00; H10W72/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
206 words
A semiconductor device having a non-conducting and a conducting state, comprising main electrode means made of a metal of good electrical and thermal conductivity including first and second electrode members, inner and outer semiconductor zones of differing conductivity types arranged intermediate said main electrode members for defining at least three junctions therebetween including an inner junction and two outer junctions, narrow strip shorting means extending through at least one of said outer junctions to provide galvanic contact in defined strip areas between at least one of said electrode members and the respective, adjacent inner semiconductor zone, whereby the same electrode member contacts both the inner and outer zones simultaneously, a gate electrode arranged for cooperation with said main electrode members to define a direction of propagation of said conducting state which starts At said gate electrode in response to a control pulse applied thereto, said narrow strip shorting means having longitudinal sides extending substantially in parallel to said direction of propagation, said electrode means further comprising outwardly extending ridges positioned to register with said narrow strip shorting means and valley bottoms between the ridges positioned to register with said semiconductor means, whereby the thickness of said ridges is larger than the thickness of said valley bottoms.
Claim 2
Dependent Claim
206 words
A semiconductor device having a non-conducting and a conducting state, comprising main electrode means made of a metal of good electrical and thermal conductivity including first and second electrode members, inner and outer semiconductor zones of differing conductivity types arranged intermediate said main electrode members for defining at least three junctions therebetween including an inner junction and two outer junctions, narrow strip shorting means extending through at least one of said outer junctions to provide galvanic contact in defined strip areas between at least one of said electrode members and the respective, adjacent inner semiconductor zone, whereby the same electrode member contacts both the inner and outer zones simultaneously, a gate electrode arranged for cooperation with said main electrode members to define a direction of propagation of said conducting state which starts At said gate electrode in response to a control pulse applied thereto, said narrow strip shorting means having longitudinal sides extending substantially in parallel to said direction of propagation, said electrode means further comprising outwardly extending ridges positioned to register with said narrow strip shorting means and valley bottoms between the ridges positioned to register with said semiconductor means, whereby the thickness of said ridges is larger than the thickness of said valley bottoms.
Claim 3
Dependent Claim
67 words
The semiconductor device according to claim 1, wherein said gate electrode comprises a longitudinal bar, said semiconductor means comprising emitter zones interconnected by a lateral emitter portion extending in parallel to said longitudinal bar of the gate electrode, said shorting means extending between its respective emitter zones and perpendicularly relative to said longitudinal bar of the gate electrode as well as perpendicularly to said lateral emitter portion.
Claim 4
Dependent Claim
41 words
The semiconductor device according to claim 2, wherein said emitter zones have a comb shape with teeth-like portions extending perpendicularly away from at least part of said lateral portion, said shorting means extending between said teeth-like portions and in parallel thereto.
Claim 5
Dependent Claim
39 words
The semiconductor device according to claim 1, wherein said shorting means are arranged adjacent to both of said first and second main electrode members, said shorting means having a congruent shape and being arranged in register with each other.
Claim 6
Dependent Claim
111 words
The semiconductor device according to claim 1, wherein one of said main electrode members comprises a central aperture therein, said semiconductor zones comprising an emitter annulus of given conductivity type and having a central region therein, said aperture and region being arranged concentrically relative to each other, a zone of a conductivity type opposite to said given conductivity type and located centrally in said aperture and said region in register with said gate electrode so that said emitter annulus surrounds the gate electrode, said emitter annulus having radially outwardly extending narrow slots therein, said narrow strip shorting means extending through said slots into galvanic contact with said one main electrode member.
Claim 7
Dependent Claim
116 words
The semiconductor device according to claim 5, wherein said zone under said gate electrode has a serated periphery formed by a plurality of radially outwardly pointing teeth with spaces therebetween, wherein said emitter annulus has an inner serated edge formed by radially inwardly pointing teeth also with spaces therebetween, and bounding said central region in said annulus, and wherein said radially inwardly and outwardly pointing teeth are arranged radially opposite each other, said spaces between said teeth also being arranged radially opposite each other, whereby said spaces are radially aligned with said narrow strip shorting means in said slots, and whereby said teeth are radially aligned with lands of said emitter annulus extending between said slots.
Claim 8
Dependent Claim
57 words
The semiconductor device according to claim 6, wherein said emitter annulus comprises a peripheral zone with further slots therein also extending radially outwardly and intermediate said first mentioned slots, said further slots being shorter than said first mentioned slots, said narrow strip shorting also extending through said further slots into galvanic contact with said one electrode member.
Claim 9
Dependent Claim
49 words
The semiconductor device according to claim 7, wherein said one electrode member comprises first and second ridges on an outer surface thereof, said ridges extending radially inwardly toward said central aperture, said ridges being located to register with first mentioned slots and said further slots in said emitter annulus.
Claim 10
Dependent Claim
50 words
The semiconductor device according to claim 5, wherein said emitter annulus has a given width, and wherein said slots are shorter than said given width whereby an inner emitter ring zone is formed which separates said gate electrode from inner ends of said narrow strip shorting means in said slots.
Claim 11
Dependent Claim
20 words
The semiconductor device according to claim 1, wherein valley bottoms have a thickness which provides a small transversal electrical resistance.
Claim 12
Dependent Claim
23 words
The semiconductor device according to claim 1, further comprising terminal means and means for directly connecting said electrode ridges to said terminal means.
Claim 13
Dependent Claim
28 words
The semiconductor device according to claim 11, wherein said main electrode means comprise means for containing a coolant which evaporates at the operating temperature of said semiconductor device.
Claim 14
Dependent Claim
44 words
The semiconductor device according to claim 11, wherein said main electrode means comprise a capillary coating on its surface opposite said semiconductor means, said capillary coating extending into areas where evaporated coolant condenses again whereby the coolant is recirculated as in a heat pipe.
Claim 15
Dependent Claim
23 words
The semiconductor device according to claim 13, wherein said capillary coating comprises a layer of capillary tungsten deposited from a tungsten vapor phase.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-05 | 1977-05-07 | 1977-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-05 | 1981-05-07 | 1981-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-05 | 1985-05-07 | 1985-11-06 | $7700.00 | Window Closed / Lapsed |