US3770499A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Liquid phase deposition of thin insulating and refractory film on a substrate
Assignee: Motorola Solutions Inc
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Filing: 1972-02-28
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Granted: 1973-11-06
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Expires: 1992-02-28
Abstract
Abstract It is known to deposit zirconium dioxide, ZrO2, on a substrate comprising a chip or wafer by providing zirconium oxychloride, ZrOCl2, vapor at about 550* C, the chip or wafer being at 450* C, in an atmosphere containing water vapor. Zirconium dioxide, ZrO2, and hydrochloric acid, HCl, are produced and a layer of the ZrO2 is deposited on the chip. The ZrO2 layer acts as a passivation material having high resistivity and very good impermeability to sodium which can be destructive of the circuit on the chip or wafer. According to this invention, the ZrO2 may be deposited on a substrate at a lower temperature from a liquid solution of the zirconium oxychloride, whereby the substrate may be paper or plastic and whereby the substrate if it includes a circuit will not be injured by the temperature needed by the prior art high temperature treatment, and therefore the possible injury to the substrate or to the circuit therein by the prior art high temperature treatment is avoided.
Inventors
- 👤 H Gurev
- 👤 W Crowe
- 👤 K Ritchie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:51
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/02; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/118
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
29 words
The method of claim 1 and further including the step of: adding ethanol to the mixture for increasing the wetting of the mixture with the surface of the substrate.
Claim 2
Dependent Claim
28 words
The method of claim 1 and further including the step of: cleaning the surface of the substrate with argon plasma prior to spreading the mixture on the surface.
Claim 3
Dependent Claim
31 words
The method of claim 1 and further including the step of: cleaning the deposited layer of ZrO2 with argon plasma; and repeating the steps to form a second layer of ZrO2.
Claim 4
Dependent Claim
50 words
The method of claim 1 wherein said heating step further comprises: heating said coated substrate to a temperature lying within the range of 125* C to about 250* C in a dry atmosphere for driving the water of hydration out of the ZrOCl2.8H2O and to change the ZrOCl2 to ZrO2.
Claim 5
Dependent Claim
37 words
The method of claim 5 and further including the step of: cleaning the deposited layer of ZrO2 by argon plasma cleaning; and repeating the steps to form a second layer of ZrO2 on the cleaned ZrO2 layer.
Claim 6
Dependent Claim
112 words
A low temperature method of depositing a layer of ZrO2 on a surface, comprising the steps of: providing a substrate having a surface to be coated with ZrO2; spreading a mixture of up to substantially 1 gram of ZrOCl2.8H2O dissolved in substantially 9 milliliters of water on the surface to uniformly coat the surface as desired; heating the coated substrate to a temperature lying within the range of 125* to 250* C until the hydrated water of ZrOCl2.8H2O is driven off; and continue heating the coated substrate to a temperature lying within the range of 125* to 250* C in an atmosphere containing water vapor until the ZrOCl2 has changed to ZrO2.
Claim 7
Dependent Claim
32 words
The method of claim 7 and further including the step of: cleaning the deposited layer of ZrO2 by argon plasma cleaning; and repeating the steps to form a second layer of ZrO2.
Claim 8
Dependent Claim
114 words
A low temperature method of depositing a layer of ZrO2 on a surface comprising the steps of: providing a silicon substrate having a surface to be coated with ZrO2; forming a mixture by dissolving up to about 1 gram of ZrOCl2.8H2O in about 9 milliliters of water; adding ethanol to the mixture for increasing the wetting of the mixture with the surface of the substrate; spreading the mixture on the substrate to uniformly coat the surface as desired; and heating the coated substrate to a teMperature within the range of 125* C to about 250* C until the hydrated water of the ZrOCl2. 8H2O is driven off and the ZrOCl2 has changed to ZrO2.
Claim 9
Dependent Claim
28 words
The method of claim 1 and further including the step of: cleaning the surface of the substrate with argon plasma prior to spreading the mixture on the surface.
Claim 10
Dependent Claim
31 words
The invention of claim 1 and further including the step of: cleaning the deposited layer of ZrO2 with argon plasma; and repeating the steps to form a second layer of ZrO2.
Claim 11
Dependent Claim
125 words
A low temperature method of depositing a layer of ZrO2 on a surface, comprising the steps of: providing a silicon substrate having a surface to be coated with ZrO2; forming a mixture by dissolving up to substantially one gram of ZrOCl2.8H2O in substantially 9 milliliters of water; adding ethanol to the mixture for increasing the wetting of the mixture with the surface of the substrate; placing a quantity of the mixture on the silicon substrate and spinning the substrate to uniformly coat the surface as desired; heating the coated substrate to a temperature lying within the range of 125* C to about 250* C in a dry atmosphere for driving the water of hydration out of the ZrOCl2.8H2O and for changing the ZrOCl2 to ZrO2.
Claim 12
Dependent Claim
144 words
A low temperature method of depositing a layer of ZrO2 on a surface, comprising the steps of: providing a silicon substrate having a surface to be coated with ZrO2; forming a mixture by dissolving up to substantially one gram of ZrOCl2.8H2O in substantially 9 milliliters of water; adding ethanol to the mixture for increasing the wetting of the mixture with the surface of the substrate; placing a quantity of the mixture on the silicon substrate and spinning the substrate to uniformly coat the surface as desired; heating the coated substrate to a temperature lying within the range of 125*to about 250* C until the hydrated water of the ZrOCl2.8H2O is driven off; and continue heating the coated substrate to a temperature lying within the range of 125* TO 250* C in an atmosphere containing sufficient water vapor until the ZrOCl2 has changed to ZrO2.
References Cited (Backward Citations)
US2904452A
Cited
US3427195A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-05 | 1977-05-07 | 1977-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-05 | 1981-05-07 | 1981-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-05 | 1985-05-07 | 1985-11-06 | $7700.00 | Window Closed / Lapsed |