Abstract High voltage planar diode structure having a semiconductor body with a planar surface. The body has a region of a first conductivity type extending to the surface and a second region in the body of opposite conductivity type and also extending to the surface and being defined by a dish-shaped P-N junction within said first region and extending to the surface. A layer of insulating material is provided on the surface and has an opening therein exposing the surface in an area overlying the second region. The insulating layer is graduated in thickness so that it becomes progressively thicker in a direction away from the opening in the insulating layer. Metallic means is disposed on the insulating layer and makes contact to said second region through the opening in the insulating layer and forms a field plate which generally overlies the depletion layer which is formed during operation of the diode.
In a semiconductor structure, a semiconductor body having a planar surface, said body having a first region of one conductivity type extending to said surface, said body having a second region within said first region and of opposite conductivity type and extending to said surface and being defined by a generally dish-shaped P-N junction extending to said surface, a layer of insulating material disposed on said surface, said layer of insulating material having an opening therein exposing said surface in an area overlying said second region, a metallic structure serving as a field plate disposed on said layer of insulating material and making contact with said second region through said opening, said layer of insulating material underlying said metallic structure and surrounding said opening being graduated in thickness so that it becomes progressively thicker in a direction away from said opening at any angle from said opening, said metallic structure extending outwardly beyond where the P-N junction extends to the surface, and metallic shielding means generally surrounding said metallic structure and in contact with said first region, said shielding means being in the form of a plurality of layers of conducting material overlapping each other and being insulated from each other.
Claim 2
Dependent Claim
201 words
In a semiconductor structure, a semiconductor body having a planar surface, said body having a first region of one conductivity type extending to said surface, said body having a second region within said first region and of opposite conductivity type and extending to said surface and being defined by a generally dish-shaped P-N junction extending to said surface, a layer of insulating material disposed on said surface, said layer of insulating material having an opening therein exposing said surface in an area overlying said second region, a metallic structure serving as a field plate disposed on said layer of insulating material and making contact with said second region through said opening, said layer of insulating material underlying said metallic structure and surrounding said opening being graduated in thickness so that it becomes progressively thicker in a direction away from said opening at any angle from said opening, said metallic structure extending outwardly beyond where the P-N junction extends to the surface, and metallic shielding means generally surrounding said metallic structure and in contact with said first region, said shielding means being in the form of a plurality of layers of conducting material overlapping each other and being insulated from each other.