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US3767945A Expired / Lapsed US ⏱️ 0.0 years remaining

Circuit and construction of semiconductor storage elements

Assignee: Siemens AG
•
Filing: 1972-02-02
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Granted: 1973-10-23
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Expires: 1992-02-02
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Abstract

Abstract A flip flop circuit and structure with integrated semiconductor storage element for dynamic technique with two field-effect transistors of the flip flop.

Inventors

  • 👤 K Goser

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 17:39
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/353; H03K3/356; H03K3/356069; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/402; G11C11/4023; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H10D84/813; H10D84/82; H10D84/83; H10D86/00; H10D99/00; H10P; H10P95/00

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 60 words
A bistable multivibrator switching circuit for a storage element comprising a pair of switching transistors interconnected in a flip-flop array with crossover paths, a transfer transistor in each crossover path having their gate electrodes directly connected with each other, and a load capacitor in each crossover path, said circuit being arranged to be connected to a source of pulse voltage.
Claim 2
Dependent Claim 60 words
A bistable multivibrator switching circuit for a storage element comprising a pair of switching transistors interconnected in a flip-flop array with crossover paths, a transfer transistor in each crossover path having their gate electrodes directly connected with each other, and a load capacitor in each crossover path, said circuit being arranged to be connected to a source of pulse voltage.
Claim 3
Dependent Claim 19 words
A bistable multivibrator switching circuit according to claim 1 in which said switching transistors are insulated gate field-effect transistors.
Claim 4
Dependent Claim 19 words
A bistable multivibrator switching circuit according to claim 1 in which said transfer transistors are insulated gate field-effect transistors.
Claim 5
Dependent Claim 120 words
A flip-flop storage element comprising a pair of insulated gate field-effect transistors for switching, a ballast capacitor connected in series with the channel of each of said switching transistors respectively, a source of voltage pulses connected across each of said series connected capacitor-transistor channels, an electric path between the gate of each of said switching transistors and a point between the channel of the other of switching transistors and its series connected capacitor, an transfer field-effect transiStor in each of said electric paths, the gates of said transfer transistors being directly connected to each other and to one side of said pulse source, and a capacitor connected between each of said electric paths and the other side of said source.
Claim 6
Dependent Claim 120 words
A flip-flop storage element comprising a pair of insulated gate field-effect transistors for switching, a ballast capacitor connected in series with the channel of each of said switching transistors respectively, a source of voltage pulses connected across each of said series connected capacitor-transistor channels, an electric path between the gate of each of said switching transistors and a point between the channel of the other of switching transistors and its series connected capacitor, an transfer field-effect transiStor in each of said electric paths, the gates of said transfer transistors being directly connected to each other and to one side of said pulse source, and a capacitor connected between each of said electric paths and the other side of said source.
Claim 7
Dependent Claim 49 words
A flip-flop storage element according to claim 4 in which a pair of access insulated gate field-effect transistors have their respective channels connected between digit lines respectively and said points respectively, and in which the gates of said access transistors are connected to access lines of a storage memory.

References Cited (Backward Citations)

US3518635A Cited
US3612900A Cited
US3683206A Cited
US3588844A Cited
US3624419A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-10-22 1977-04-23 1977-10-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-10-22 1981-04-23 1981-10-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-10-22 1985-04-23 1985-10-23 $7700.00 Window Closed / Lapsed

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