Method for epitaxially growing layers of a semiconductor material from the liquid phase
Abstract
Abstract A furnace boat having a plurality of spaced deposition solution containing wells in its upper surface with each well having a recess in its bottom surface. A slide extends through the boat so as to extend across each of the wells and over the recesses in the wells. The slide has a recess in its upper surface and an opening therethrough adjacent to but spaced from the recess. A plurality of epitaxial layers can be deposited on a substrate in succession by placing a separate source body of a semiconductor material in each well recess and a substrate in the slide recess. The deposition solutions are brought into contact with the respective source bodies through the opening in the slide to exactly saturate the deposition solutions with the semiconductor material and the substrate is then brought into contact with the exactly saturated solutions in succession to deposit the epitaxial layers.
Inventors
- 👤 M Ettenberg
- 👤 V Cannuli
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1976-10-22 | 1977-04-23 | 1977-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-22 | 1981-04-23 | 1981-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-22 | 1985-04-23 | 1985-10-23 | $7700.00 | Window Closed / Lapsed |