Glass melt through diffusions

Abstract

Abstract A PROCESS FOR DIFFUSING IMPURITY DOPANTS INTO A SEMICONDUCTOR SUBSTRATE FROM AN IMPURITY CONTAINING (DOPED) GLASS FILM, AND IN PARTICULAR THROUGH AN INTERMEDIATE UNDOPED INSULATING GLASS FILM, SUCH AS AN OXIDE OF THE SEMICONDUCTOR SUBSTRATE IS DESCRIBED. IN ONE EMBODIMENT, DIFFUSION OF BORON ATOMS INTO A SILICON SUBSTRATE IS DESCRIBED AS COMPRISING THE STEPS OF PROVIDING A BORON TRIOXIDE DOPED SILICON DIOXIDE GLASS CONTAINING BETWEEN APPROXIMATELY 20 AND 50 MOLAR PERCENT OF BORON TRIOXIDE OVER A SILICON DIOXIDE LAYER OVERLYING A SILICON SUBSTRATE AND HEATING THE SUBSTRATE TO CAUSE THE DOPED GLAS TO UNDERGO AN ABRUPT PSEUDO CHANGE IN STATE FROM A HIGHLY VISCOUS GLASSY STATE TO A LOW VISCOSITY FLOWABLE GLASSY STATE AND TO DISSOLVE THE ADJACENT UNDOPED GLASS AS THE BORON TRIOXIDE MELTS-THROUGH THE UNDOPED GLASS TOWARD THE SURFACE OF THE SILICON SUBSTRATE WHEREUPON FREE BORON ATOMS DIFFUSE INTO THE SUBSTRATE.

Inventors

• 👤 D Brown

Bibliographic Details