US3764410A
Expired / Lapsed
US
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Method of making ultra fine geometry planar semiconductor devices
Assignee: Motorola Solutions Inc
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Filing: 1972-03-13
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Granted: 1973-10-09
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Expires: 1992-03-13
Abstract
Abstract A METHOD OF MAKING ULTRA-FINE GEOMETRY PLANAR-TYPE SEMICONDUCTOR DEVICES ON A SEMICONDUCTOR SUBSTRATE OF ONE CONDUCTIVITY TYPE THROUGH USING ULTRA-FINE SHAPED AREAS OF DOPANT MATERIAL TO PROVIDE SEMICONDUCTOR REGIONS OF AN OPPOSITE CONDUCTIVITY TYPE AND THEN USING ACCESS WINDOWS FORMED BY REMOVING THE DOPANT MATERIAL TO PROVIDE ANOTHER SEMICONDUCTOR REGION OF THE ONE CONDUCTIVITY TYPE. THE DOPANT MATERIAL CAN BE EITHER OF P-TYPE OF N-TYPE CONDUCTIVITY AND IS FORMED INTO AN ULTRA-FINE GEOMETRY THROUGH USING SILICON OXIDE AS A MASK IN A DOUBLE ETCHING STEP.
Inventors
- 👤 R Hays
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:37
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/106; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-08 | 1977-04-09 | 1977-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-08 | 1981-04-09 | 1981-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-08 | 1985-04-09 | 1985-10-09 | $7700.00 | Window Closed / Lapsed |