Method of forming region of a desired conductivity type in the surface of a semiconductor body
Abstract
Abstract A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium arsenide containing a relatively high concentration of aluminum. The aluminum gallium arsenide layer has therein a desired conductivity modifier. The coated body is heated to diffuse the conductivity modifier from the layer into the body to form a region of a desired conductivity along the surface of the body. At least a portion of the layer is etched away with an etchant which does not attack the material of the body, such as boiling hydrochloric acid, to expose at least a portion of the surface of the body.
Inventors
- 👤 H Kressel
- 👤 H Nelson
Bibliographic Details
Claims Analysis
Total Claims: 5References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-01 | 1977-04-02 | 1977-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-01 | 1981-04-02 | 1981-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-01 | 1985-04-02 | 1985-10-02 | $7700.00 | Window Closed / Lapsed |